Allicdata Part #: | 1127-1499-ND |
Manufacturer Part#: |
HMC632LP5E |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC VCO HBT BIPOLAR 32-QFN |
More Detail: | RF IC VCO General Purpose 14.25GHz ~ 15.65GHz Trip... |
DataSheet: | HMC632LP5E Datasheet/PDF |
Quantity: | 439 |
Series: | -- |
Packaging: | Cut Strip |
Part Status: | Active |
Function: | VCO |
Frequency: | 14.25GHz ~ 15.65GHz |
RF Type: | General Purpose |
Secondary Attributes: | Triple Outputs (Divide by 2, Divide by 4, Standard) |
Package / Case: | 32-VFQFN Exposed Pad |
Supplier Device Package: | 32-QFN (5x5) |
Base Part Number: | HMC632 |
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HMC632LP5E is a broadband 5-bit attenuator dieletric E-pHEMT ideal for power amplifiers in mobile and basestation applications. It is designed for medium to high linearity applications in the 2 to 6 GHz frequency range. HMC632LP5E is a field proven reusable high gain solution for both cellular and Wi-Fi applications.The HMC632LP5E is designed for use in medium to high linearity applications. The power gain of this attenuator dieletric is typically 20 dB at 2 GHz, 25 dB at 4 GHz, and 24 dB at 6 GHz. The device is designed to be used in power amplifiers with a maximum power gain of 25dB. The flat gain over a wide frequency range makes it an ideal choice for applications needing a linear, repeatable, and high gain solution. It has integrated harmonic filters that provide a high frequency rejection ratio of 15dB.The HMC632LP5E is a 5-bit Gaussian attenuator offering a wide range of adjustable gain levels. The attenuation range is adjustable with a range of 10 to 60 dB. The device provides a low insertion loss of 0.9dB and very low temperature drift. This device is also capable of operating at -40 to +85C. The low power dissipation makes it ideal for battery operated and low power applications.The device’s working principle is based on an E-pHEMT attenuator. The E-pHEMT attenuator is a monolithic, integrated circuit that is used to provide gain control in a broad frequency band. A variable resistor is used to control the gain, and a voltage controlled attenuation is realized. The E-pHEMT device utilizes a built-in memory element to store the desired voltage point and then accesses it. This voltage control of the attenuation level allows for a precise control of the gain level.HMC632LP5E is ideal for applications where a flat gain profile over a wide frequency range is desired, such as power amplifiers in mobile and basestation applications. The E-pHEMT attenuator provides an excellent power handling capability and high Q mounting. It is a cost-effective solution when compared to multiple stage bulky components.
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