HMPS-2825-TR2 Allicdata Electronics
Allicdata Part #:

HMPS-2825-TR2-ND

Manufacturer Part#:

HMPS-2825-TR2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY RF 15V 1A MINIPAK
More Detail: RF Diode Schottky - 2 Independent 15V 1A MiniPak ...
DataSheet: HMPS-2825-TR2 datasheetHMPS-2825-TR2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 15V
Current - Max: 1A
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 12 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 4-UQFN
Supplier Device Package: MiniPak 1412
Description

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Diodes are the most basic components of any electronic circuit. The HMPS-2825-TR2 is a type of semiconductor diode specifically used for radio frequency (RF) applications. This article will discuss how diodes are used in RF applications, what specific features make this component suitable for use in these applications, and how it works.

A diode is a two-terminal component with a p-n junction that allows current to flow in one direction only. In RF applications, they are used to provide protection against excessive voltages or surges and to control circuit impedance levels. The most common type of diode used in these applications is the metal-oxide-semiconductor field-effect transistor (MOSFET). The reason for this is that MOSFETs have the capability to operate at very high frequencies, allowing for better control of the circuit\'s impedance levels. Additionally, MOSFETs have extremely low power consumption, which is a significant factor when designing RF circuits.

The HMPS-2825-TR2 is a high-frequency double-balanced RF MOSFET that is used in RF applications for various purposes. The component is specifically designed for the automotive industry and has a maximum operating frequency of 2.8GHz. The component is composed of a silicon substrate and has a number of features that make it suitable for use in RF applications. It features very fast switching times, low power consumption, and excellent thermal stability. Additionally, it has a very low noise floor and high sensitivity, which make it well-suited for low-power RF applications.

The working principle of the HMPS-2825-TR2 is the same as any other MOSFET. When a voltage is applied to one of its terminals, it allows the flow of electrons through the MOSFET channel. This allows the component to control the direction and flow of electricity through the circuit. Additionally, the component is designed to respond quickly to changes in voltage and current levels, allowing it to effectively adjust the impedance levels in a circuit. This allows it to protect the circuit from excessive voltages or surges.

In conclusion, the HMPS-2825-TR2 is a high-frequency double-balanced RF MOSFET that is suitable for use in RF applications. It features fast switching times, low power consumption, excellent thermal stability, and a low noise floor and high sensitivity. Additionally, its working principle is the same as any other MOSFET, and it is designed to respond quickly to changes in voltage or current levels. These features make the HMPS-2825-TR2 an excellent choice for a wide range of RF applications in the automotive industry.

The specific data is subject to PDF, and the above content is for reference

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