Allicdata Part #: | HN58X25128FPIAG#S0-ND |
Manufacturer Part#: |
HN58X25128FPIAG#S0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC EEPROM 128K SPI 5MHZ 8SOP |
More Detail: | EEPROM Memory IC 128Kb (16K x 8) SPI 5MHz 8-SOP |
DataSheet: | HN58X25128FPIAG#S0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 128Kb (16K x 8) |
Clock Frequency: | 5MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The HN58X25128FPIAG#S0 is a type of integrated semiconductor memory that comes in a small 8-pin package. It is primarily known for its lightweight design, low power consumption, and versatile use in a range of consumer electronic applications. The HN58X25128FPIAG#S0 is composed of a variety of elements that serve to store and retrieve data. This includes two matched sets (or pairs) of series pairs of complementary field effect transistors (FETs) arranged in a series with two additional lateral bi-directional inhibit transistors. The series FETs form the bit cells which are the primary unit of memory storage in the HN58X25128FPIAG#S0 memory. Bit cells are arranged into an array of rows and columns which form the actual memory unit.
When a bit cell is read from the memory, the lateral bi-directional inhibit transistors (BIFTs) are used to isolate the bit cells from one another to ensure that the correct data is read. When a bit cell is written to, the isolating BIFTs are opened and the desired data is written to the bit cell. The series FETs are then used again to isolate other bits from the writing process.
The working principle of the HN58X25128FPIAG#S0 is to use two modes of operation – read and write. In read mode, the lateral inhibit transistors direct the electrical current to the designated bit cells, allowing these cells to connect with the output of the memory. In write mode, the lateral inhibit transistors isolate the bit cells, allowing them to receive the desired data signal which is then stored in the memory.
The HN58X25128FPIAG#S0 is primarily found in consumer electronic devices such as TV’s, radios, game consoles and audio players. It is also used in medical, industrial and automotive applications. As it is a light weight and low power consumption memory, it can be used in a range of applications where power consumption and size are important considerations.
The HN58X25128FPIAG#S0 is an effective and versatile memory solution for a range of consumer electronic device applications. It is a lightweight, low power type of memory that is capable of storing and retrieving data effectively. By using two distinct modes of operation – read and write – it is able to handle a wide range of needs and requirements. Additionally, the HN58X25128FPIAG#S0 is suitable for a range of industries from medical and automotive to consumer electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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HN58X25128FPIAG#S0 | Renesas Elec... | 0.0 $ | 1000 | IC EEPROM 128K SPI 5MHZ 8... |
HN58X25256FPIAG#S0 | Renesas Elec... | -- | 1000 | IC EEPROM 256K SPI 5MHZ 8... |
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