HSMS-270B-BLKG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Diode Type:	Schottky - Single
Voltage - Peak Reverse (Max):	15V
Current - Max:	750mA
Capacitance @ Vr, F:	6.7pF @ 0V, 1MHz
Resistance @ If, F:	650 mOhm @ 100mA, 1MHz
Power Dissipation (Max):	825mW
Operating Temperature:	150°C (TJ)
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	HSMS-270B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HSMS-270B-BLKG: Overview

HSMS-270B-BLKG is a high-performance, high speed silicon microwave diode developed by Hewlett Packard. This series of diodes was designed for ultra-efficient power delivery and stable frequency switching, making it ideal for use in telecommunications, CATV and radar applications. The HSMS-270B-BLKG offers the highest operating temperature range of any modern diode, ranging from -40C to +225C. It is also optimized for high output power and low thermal issues, boasting an outstanding power handling up to 10 watts.

Application Field of HSMS-270B-BLKG

HSMS-270B-BLKG is usually used for a wide variety of applications in the field of RF (radio frequency), such as cellular networks, wireless communication, radar, satellite downlinks, and automotive communications. The HSMS-270B-BLKG is particularly well suited to modern solutions that require high performance, lower power consumption, and increased reliability. This versatile diode is ideal for applications that require extremely fast switching speeds and long term reliability, such as those found in CATV systems, automotive control systems, and Wi-Fi networks. It is also an ideal choice for high frequency application in data-sensitive industrial solutions such as medical diagnostics and test equipment. This type of diode is also used in a number of military applications and cable systems due to its high performance and reliability.

Working Principle of HSMS-270B-BLKG

HSMS-270B-BLKG was designed to provide an extremely fast switching speed, with exceptional levels of reliability and durability. Its outstanding characteristics ensure that its performance is optimized even under extreme power and environmental conditions. In order to achieve its exceptional performance, the diode is equipped with a key component called the Avalanche Breakdown Turn-On (ABTO). This component helps maintain a stable switching frequency even when subjected to high-power conditions. Furthermore, the diode is based on an optically-coupled process, which allows high energy efficiency while also ensuring that the diode is highly resistant to ESD, thermal and electrical overloads.The HSMS-270B-BLKG uses a wide range of advanced technologies, including flip chip and flip chip on ceramic substrates, to ensure the best possible performance. Its state-of-the-art design ensures that it can withstand strong electric fields from nearby components, as well as thermal issues from its own power dissipation.

Conclusion

HSMS-270B-BLKG is one of the most advanced diodes available on the market today. Its impressive performance and exceptional reliability make it a great choice for all kinds of RF, telecommunications, and military applications. The advanced ABTO technology ensures that the diode is extremely resistant to thermal and electrical overloads, while its wide temperature range makes it a reliable choice even in the most extreme conditions. Finally, its flip chip technology and high energy efficiency make it an excellent choice for those looking for low power consumption and increased reliability.

The specific data is subject to PDF, and the above content is for reference