HSMS-270B-TR2G Allicdata Electronics
Allicdata Part #:

HSMS-270B-TR2G-ND

Manufacturer Part#:

HSMS-270B-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY 15V 750MA SOT-323
More Detail: RF Diode Schottky - Single 15V 750mA 825mW SOT-323
DataSheet: HSMS-270B-TR2G datasheetHSMS-270B-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 15V
Current - Max: 750mA
Capacitance @ Vr, F: 6.7pF @ 0V, 1MHz
Resistance @ If, F: 650 mOhm @ 100mA, 1MHz
Power Dissipation (Max): 825mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: HSMS-270B
Description

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The HSMS-270B-TR2G is an RF diode designed to provide high-performance and reliable operation in a variety of applications. It is a surface-mount device with a wide frequency range of 0.018-0.3GHz and a comprehensive range of features including excellent frequency stability, high linearity, low leakage, high gain and low noise level.

The HSMS-270B-TR2G is suitable for use in a variety of applications in the RF field such as RF transmitters and receivers, RF filters, RF power amplifiers, oscillators and receivers. The high linearity and low noise levels of the device make it particularly suitable for use in applications where high performance is required. In addition, the low leakage characteristics makes it suitable for use as a mixer which is essential for wireless communication applications.

The HSMS-270B-TR2G uses a metal can package and a small profile design which enhances its usability in a range of applications such as space-limited environments. The device offers good performance even in challenging environments such as high temperature and high humidity. It is also qualified to meet MIL 810 and ESCC standards.

The working principle of the HSMS-270B-TR2G is based on the use of two PN junctions which enable it to process radio frequency signals. These junctions are made from two semiconductor materials, one of which is a donor material and the other an acceptor material. The donor material is composed of a material with more electrons than protons and when it is connected with the acceptor material, an electric current is created. This current is what enables the HSMS-270 B-TR2G to process radio frequency signals.

The HSMS-270B-TR2G has an operating temperature range of -55°C to +150°C and a maximum reverse voltage of 5V. It also offers high isolation of up to 65dB and excellent RF shielding. In addition, the device features low thermal resistance of around 0.2°C/W. This ensures that the device operates effectively even in very harsh environments.

The HSMS-270B-TR2G is a robust and reliable device that can be used for a variety of RF applications. It offers excellent frequency stability and high linearity, low leakage and high gain and low noise levels. The small profile and metal can package of the HSMS-270B-TR2G make it suitable for use in a range of applications, including space-limited environments. Moreover, high isolation and RF shielding capabilities make it an ideal choice for wireless communication applications.

The specific data is subject to PDF, and the above content is for reference

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