
Allicdata Part #: | HSMS-270P-TR2G-ND |
Manufacturer Part#: |
HSMS-270P-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE RF SCHTKY 15V 750MA SOT363 |
More Detail: | RF Diode Schottky - 1 Bridge 15V 750mA 825mW SOT-3... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 15V |
Current - Max: | 750mA |
Capacitance @ Vr, F: | 6.7pF @ 0V, 1MHz |
Resistance @ If, F: | 650 mOhm @ 100mA, 1MHz |
Power Dissipation (Max): | 825mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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Silicon RF Schottky diodes have become increasingly prevalent in modern technology applications, such as wireless communication, switching and low-noise circuits. The HSMS-270P-TR2G is an ideal example of a silicon-based Schottky diode, which is a type of diode that exhibits low and consistent leakage current, making them a preferred choice for use in high-frequency applications.
The HSMS-270P-TR2G is a surface mountable Schottky diode with a maximum reverse breakdown voltage of 27V and a maximum forward current rating of 2A. The device is made with a Silicon High Electromagnetic Immunity (HI-EMI) construction, and is designed to work in harsh environments where high frequencies from switching and RF applications are present.
The HSMS-270P-TR2G is typically used in RF applications where precise control of RF signal is needed, such as satellite communication and cell phone base stations. It also has many applications in digital logic circuits, such as logic gates and driver circuits. The device is an ideal choice for high-frequency applications, as it has low and consistent leakage currents, making it a good choice for sensitive receiving applications.
The working principle of the HSMS-270P-TR2G is quite simple. The device acts as a two-terminal switch that is biased by a continuous current source. When a voltage is applied across its terminals, electrons flow from the anode side which is the N-type material side, to the P-type material side, which is the cathode side. This causes charge to accumlate on either side of the device, producing a potential difference between its terminals.
When a forward bias voltage is applied, the device is able to conduct a current from the anode to the cathode. This current will be a function of the applied voltage, and be limited by the maximum current rating of the device. When the device is reverse-biased, no current flows, since the device acts as an open switch. The switching action of the Schottky diode is what is used in applications such as logic gates, where it is able to switch on or off a current or voltage source.
The HSMS-270P-TR2G is also able to function as a rectifier in power supply and amplifier circuits. In rectifier circuits, the Schottky diodes will serve as a one-way current flow controller, allowing only current to flow when the anode is at a higher voltage than the cathode. This allows them to be used to change alternating current (AC) to direct current (DC).
In amplifier circuits, the diode helps to control the bias voltage of a transistor. It can be used to reduce the gain of the amplifier, and help to provide a more stable operating point. Additionally, it can also be helpful in providing over-voltage protection for transistors, allowing them to be used for higher frequency applications.
The HSMS-270P-TR2G is a highly reliable, surface mountable silicon-based Schottky diode which is ideal for high-frequency applications. Its low leakage current and wide frequency range makes it an ideal choice for various RF applications, as well as digital logic circuits and rectifier circuits. Its maximum forward current rating of 2A, and reverse breakdown voltage of 27V make it a reliable choice for these applications.
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