Allicdata Part #: | HSMS-2808-TR2G-ND |
Manufacturer Part#: |
HSMS-2808-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY RF QD 70V SOT-143 |
More Detail: | RF Diode Schottky - 1 Bridge 70V 1A SOT-143-4 |
DataSheet: | HSMS-2808-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 70V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Resistance @ If, F: | 35 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
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The HSMS-2808-TR2G is a versatile Schottky diode used for a wide variety of applications requiring medium-to-high frequency and power. It works in the range of 5 - 2000 MHz and has a peak power rating of 28 W.
The HSMS-2808-TR2G diode is primarily used in RF (Radio Frequency) applications. It is a two-terminal, unidirectional (non-polarized) diode which has a Schottky barrier metal layer and a p-n junction. This Schottky barrier makes it efficient in a wide-frequency range because it has a low voltage drop and a low junction thermal resistance. This gives it a higher efficiency even when it comes to switching large amounts of power. It also has a fast switching time which makes it suitable for use in high-speed designs.
In terms of its applications, the HSMS-2808-TR2G diode is used in a variety of different RF circuits. It is often used as a switch in band-pass filters and as a voltage regulator in voltage-controlled oscillators. It is also used in low noise amplification amplifiers, noise canceling filters, and harmonic generators. It is also used in cellular and wireless communication systems, military systems, and satellite communication systems.
In terms of its working principle, the HSMS-2808-TR2G diode operates in two basic modes. In the forward breakover mode, the current begins to flow when the voltage exceeds the forward voltage drop of the Schottky barrier. This voltage is typically around 0.38 V to 0.5 V. As the voltage increases, the forward current also increases, but at a decreasing rate since the diode’s resistance decreases as the voltage increases. Once the voltage reaches a certain point, the current begins to flow with virtually no ohmic resistance.
In the reverse mode, the diode is in its off state, which means the current is zero. If a reverse voltage is applied, the voltage is high enough to break over the Schottky barrier and an avalanche current begins to flow. The reverse current is much lower than the forward current, but is still enough to create significant power dissipation. This is why it is important to make sure that the reverse voltage is low so that the power dissipation is minimized.
In conclusion, the HSMS-2808-TR2G is a versatile Schottky diode which is used for a wide variety of applications requiring medium-to-high frequency and power. Its Schottky barriers makes it efficient in a wide frequency range with a low voltage drop and low thermal junction resistance. This makes it suitable for use in RF circuits such as band-pass filters, harmonic generators, and noise cancellation filters. It also has a fast switching time and can handle high voltage and power, making it suitable for use in high-speed designs.
The specific data is subject to PDF, and the above content is for reference
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