HSMS-280B-TR1G

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The HSMS-280B-TR1G is a high-frequency Pin Diode developed by Agilent Technologies, Inc. It is designed for use in RF applications such as filtering, switching and detection. The diode is housed in an optimized package for excellent electrical performance, thermal stability and mechanical robustness.

The HSMS-280B-TR1G is a voltage controlled pin diode with low capacitance and high frequency performance. It features an integrated capacitance and depletion region as well as an internal bias resistor. The depletion region is designed to reduce the forward and reverse currents at high frequency, making it ideal for high-frequency applications. Additionally, it has low capacitance and a low turn-on voltage to reduce device switching time and improve performance.

The HSMS-280B-TR1G diode is suitable for a variety of RF applications including switching and filtering, RF impedance matching and attenuation, and radio frequency (RF) and microwave test and measurement. The diode is also ideal for RF receivers, navigation systems, and wireless communications systems.

The HSMS-280B-TR1G diode works by allowing small DC signals to control the flow of current through the diode. When a forward bias is applied to the diode, the reverse current decreases significantly, allowing the diode to act as an impedance matching device. The reverse current increases significantly when the forward bias is removed, allowing the diode to act as an RF attenuator. The reverse current is also decreased by applying a reverse bias, allowing the diode to act as a switch and attenuator.

The HSMS-280B-TR1G diode is designed for use in high frequency applications and features low capacitance and high forward and reverse current ratings. It is housed in an optimized package for thermal stability and mechanical robustness. The diode is suitable for a variety of RF applications including RF receivers, navigation systems, and wireless communications systems.

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