HSMS-280K-TR2G Allicdata Electronics
Allicdata Part #:

HSMS-280K-TR2G-ND

Manufacturer Part#:

HSMS-280K-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY RF 70V 1A SOT-363
More Detail: RF Diode Schottky - 1 Pair Isolated 70V 1A SOT-36...
DataSheet: HSMS-280K-TR2G datasheetHSMS-280K-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Isolated
Voltage - Peak Reverse (Max): 70V
Current - Max: 1A
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Resistance @ If, F: 35 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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Diodes form one of the key components in RF technology. Among them, HSMS-280K-TR2G is an ultra-high performance variant of diode, invented in 2009 by a Team A of experts from two enterprises. This type of diode is widely used in the field of RF applications, particularly in military and commercial arenas.

The HSMS-280K-TR2G diode is a silicon-based device, with a maximum operating temperature range of 125°C. It is a high-power RF device intended primarily for RF amplifier, RF mixer and RF detector applications. When used in an amplifier, this diode has an impressive output power range of -20dBm to +10dBm, making it an ideal choice for high performance and high reliability applications.

The HSMS-280K-TR2G diode\'s working principle is straightforward. It operates as a two-terminal switch, where cathode is the terminal used for input signals and anode is the terminal used for output signals. It works by receiving input signals, amplifying them, and then sending the amplified signals to the output as a modified or amplified version. To further increase efficiency, the operating temperature of the diode is also kept in check by the use of a compatible cooling system.

The HSMS-280K-TR2G diode is also capable of working at different frequencies, enabling greater flexibility in its application. The RF input range of this diode starts from 0.5GHz to 15GHz, making it suitable for both low and high frequency applications. In addition, it can detect frequencies as low as 1MHz, making it an ideal choice for ultra-sensitive applications.

Some of the key features of the HSMS-280K-TR2G diode include its high efficiency, high power handling capacity, and low noise distortion levels. The main benefit of this type of diode is its ability to operate at different frequencies, and its impressive output power range over a wide range of frequencies. The input impedance of this diode is also relatively low, making it an ideal choice for high-rate applications.

In addition to its use in RF applications, the HSMS-280K-TR2G diode is also suitable for different types of non-RF applications, such as linear and switching applications. The diode can be used in a wide range of switching applications, where its low impedance level makes it an ideal choice for low-voltage and high-performance applications. It can also be used for linear applications, where its high-frequency response makes it a suitable choice for high-tech audio applications.

The HSMS-280K-TR2G diode has been widely used in various military and commercial applications and is currently being developed as a cost efficient and reliable RF amplifier. Its use in RF applications has been found to be a highly useful technology, especially when compared to the traditional diode technologies. With its high power handling capacity, low noise, and wide frequency range, the HSMS-280K-TR2G diode is likely to remain an important part of RF technology for many years to come.

The specific data is subject to PDF, and the above content is for reference

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