| Allicdata Part #: | HSMS-280P-BLKG-ND |
| Manufacturer Part#: |
HSMS-280P-BLKG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Broadcom Limited |
| Short Description: | DIODE SCHOTT RF QUAD 70V SOT-363 |
| More Detail: | RF Diode Schottky - 2 Pair Series Connection 70V 1... |
| DataSheet: | HSMS-280P-BLKG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | Schottky - 2 Pair Series Connection |
| Voltage - Peak Reverse (Max): | 70V |
| Current - Max: | 1A |
| Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
| Resistance @ If, F: | 35 Ohm @ 5mA, 1MHz |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SOT-363 |
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The HSMS-280P-BLKG belongs to the category of RF diodes, which is a type of semiconductor device. As a type of diode, its primary role is to allow electric current to pass in one direction while blocking the current in the opposite direction. The HSMS-280P-BLKG is a high-speed diode specifically designed for RF applications. The device is available in a variety of package options, including surface mount and through-hole versions.
The main function of the HSMS-280P-BLKG is to provide radio-frequency (RF) signal switching in applications such as radio receivers and transmitters. In addition, due to its high-speed performance, it can be used for applications such as signal compression, signal mixing, signal detection, and signal integration.
Working main principle of the HSMS-280P-BLKG is based on the “punch-through” effect. It is due to the depletion layer of the diode, which is a very thin layer of semiconductor between the n- and p-type regions of the diode. The depletion layer contains equal numbers of electrons and holes, and when a forward voltage is applied to the diode, the depletion layer is widened, allowing current to flow through it. As the voltage increases, the depletion layer gets thicker, eventually reaching a point where the electric field is strong enough to pull electrons away from the p-type region and holes away from the n-type region. This leads to a “punch-through” effect, where the current is able to bypass the depletion layer and pass through the diode.
The HSMS-280P-BLKG is also capable of handling very high peak currents. This is because the diode is designed to be able to withstand peak currents up to ten times its rated current. The high peak current rating of the HSMS-280P-BLKG makes it ideal for applications that require quick switching, such as in high-speed data transfer. Furthermore, it can also deliver high power efficiency in applications that require a high level of power. It is thus suitable for use in RF power amplifiers, RF transmitters, and power converters, which require efficient and rapid switching.
The HSMS-280P-BLKG is an ideal choice for RF applications due to its ability to provide high-speed performance and high peak current rating. Furthermore, its ability to handle high-power applications makes it a versatile device for applications that require efficient and rapid switching. With its wide variety of package options, the HSMS-280P-BLKG is a reliable and cost-effective solution for radiofrequency switching.
The specific data is subject to PDF, and the above content is for reference
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HSMS-280P-BLKG Datasheet/PDF