HSMS-280P-TR2G Allicdata Electronics
Allicdata Part #:

HSMS-280P-TR2G-ND

Manufacturer Part#:

HSMS-280P-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTT RF QUAD 70V SOT-363
More Detail: RF Diode Schottky - 2 Pair Series Connection 70V 1...
DataSheet: HSMS-280P-TR2G datasheetHSMS-280P-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 2 Pair Series Connection
Voltage - Peak Reverse (Max): 70V
Current - Max: 1A
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Resistance @ If, F: 35 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The HSMS-280P-TR2G is a specially designed diode for RF (Radio Frequency) applications. The diode is a Schottky Barrier diode with a unique design that allows for superior performance in RF applications. The diode has a low capacitance and a low leakage current, making it suitable for use in high-frequency applications. The diode has a maximum current rating of 8 Amps and a maximum voltage rating of 15 Volts.

The HSMS-280P-TR2G is designed to provide superior performance in high speed, high frequency applications such as W-CDMA (Wideband Code-Division Multiple Access), CDMA (Code-Division Multiple Access) and WiMAX (Worldwide Interoperability for Microwave Access). The diode also has a low series resistance and a low junction capacitance, making it ideal for high power applications. The diode has a frequency range of up to 16 GigaHertz (16 GHz). The diode is also capable of handling power levels up to 1 Watt.

The working principle of the HSMS-280P-TR2G is based on the diode’s Schottky Barrier design. The Schottky Barrier design is composed of a metal-semiconductor junction with a higher voltage drop than a traditional PN junction. When a voltage is applied to the diode, the metal on one side of the junction becomes positively charged, while the semiconductor on the other side of the junction becomes negatively charged. The positive and negative charges create an electric field, which pushes electrons from one side of the diode to the other, creating a current flow.

The HSMS-280P-TR2G diode is ideal for high-speed RF applications, such as wireless telecommunications systems. The diode’s extremely low capacitance and leakage current make it ideal for low-noise and high-speed applications, while its low series resistance and junction capacitance make it suitable for high power applications. The diode has a frequency range of up to 16 GigaHertz (16 GHz), and is capable of handling power levels up to 1 Watt. The diode is also highly reliable, making it a good choice for industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

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