
Allicdata Part #: | HSMS-280R-TR2G-ND |
Manufacturer Part#: |
HSMS-280R-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTT RF QUAD 70V SOT-363 |
More Detail: | RF Diode Schottky - 2 Pair Series Connection 70V 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 2 Pair Series Connection |
Voltage - Peak Reverse (Max): | 70V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Resistance @ If, F: | 35 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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The HSMS-280R-TR2G is a family of diodes designed for general-purpose radio frequency (RF) use. This diode has a wide range of applications and can be used for a variety of tasks, from amplifying low-level RF signals to switching high-power signals. The diode is equipped with a rugged interior coating, making it highly resistant to corrosion and other environmental damage.
The HSMS-280R-TR2G has a frequency range of 8 to 14 GHz, with a maximum power dissipation of 1.5 W. The diode has a forward current (IF) of 75 mA and a reverse current (IR) of 200 mA. It is also rated for a Junction temperature of 175°C, allowing it to handle heavy duty operations.
Due to its robust design, the diode is suitable for a wide range of RF applications, such as power amplifiers, transmitters, receivers, mixers and oscillators. The diode is also suitable for switching high-power signals, as it is capable of carrying large IF currents. As such, it can be used in switching circuits such as modulators and transistors.
The HSMS-280R-TR2G works on a basic principle of two p-type and n-type layers. When the diode is forward-biased, the p-type layer allows electrons to flow, while the n-type layer inhibits the flow of electrons. This creates a separation between the two layers, and a current is generated.
When the diode is reverse-biased, the n-type layer allows electrons to flow, while the p-type layer inhibits flow. This creates a separation between the two layers, and a voltage is generated. The voltage generated can be manipulated by varying the current flowing through the diode.
By using an appropriate combination of forward- and reverse-biased diodes, a multitude of electrical and RF circuits can be created. This includes analog and digital systems such as antennas, filters, mixer stages, and multiplexers.
The HSMS-280R-TR2G is an extremely versatile diode and is suitable for a range of RF applications. It is highly resistant to environmental damage and can handle large current. Moreover, the diode can be used to create a variety of electrical and RF circuits.
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