HSMS-280R-TR2G Allicdata Electronics
Allicdata Part #:

HSMS-280R-TR2G-ND

Manufacturer Part#:

HSMS-280R-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTT RF QUAD 70V SOT-363
More Detail: RF Diode Schottky - 2 Pair Series Connection 70V 1...
DataSheet: HSMS-280R-TR2G datasheetHSMS-280R-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 2 Pair Series Connection
Voltage - Peak Reverse (Max): 70V
Current - Max: 1A
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Resistance @ If, F: 35 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The HSMS-280R-TR2G is a family of diodes designed for general-purpose radio frequency (RF) use. This diode has a wide range of applications and can be used for a variety of tasks, from amplifying low-level RF signals to switching high-power signals. The diode is equipped with a rugged interior coating, making it highly resistant to corrosion and other environmental damage.

The HSMS-280R-TR2G has a frequency range of 8 to 14 GHz, with a maximum power dissipation of 1.5 W. The diode has a forward current (IF) of 75 mA and a reverse current (IR) of 200 mA. It is also rated for a Junction temperature of 175°C, allowing it to handle heavy duty operations.

Due to its robust design, the diode is suitable for a wide range of RF applications, such as power amplifiers, transmitters, receivers, mixers and oscillators. The diode is also suitable for switching high-power signals, as it is capable of carrying large IF currents. As such, it can be used in switching circuits such as modulators and transistors.

The HSMS-280R-TR2G works on a basic principle of two p-type and n-type layers. When the diode is forward-biased, the p-type layer allows electrons to flow, while the n-type layer inhibits the flow of electrons. This creates a separation between the two layers, and a current is generated.

When the diode is reverse-biased, the n-type layer allows electrons to flow, while the p-type layer inhibits flow. This creates a separation between the two layers, and a voltage is generated. The voltage generated can be manipulated by varying the current flowing through the diode.

By using an appropriate combination of forward- and reverse-biased diodes, a multitude of electrical and RF circuits can be created. This includes analog and digital systems such as antennas, filters, mixer stages, and multiplexers.

The HSMS-280R-TR2G is an extremely versatile diode and is suitable for a range of RF applications. It is highly resistant to environmental damage and can handle large current. Moreover, the diode can be used to create a variety of electrical and RF circuits.

The specific data is subject to PDF, and the above content is for reference

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