HSMS-2812-TR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max):	20V
Current - Max:	1A
Capacitance @ Vr, F:	1.2pF @ 0V, 1MHz
Resistance @ If, F:	15 Ohm @ 5mA, 1MHz
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	HSMS-2812

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HSMS-2812-TR1 Application Field and Working Principle

HSMS-2812-TR1 is a high-performance and low-cost high-speed Schottky diode designed for radio frequency (RF) applications. The diodes are designed using a proprietary Schottky contact process, providing outstanding RF performance. They are usually used in a variety of RF and microwave circuits applications, such as RF/microwave front-end designs, switches, amplifiers, and radio receivers.The HSMS-2812-TR1 is designed with a highly reliable Schottky diode structure and a low capacitance, making it ideal for use in high-speed, high-frequency circuits. The device is also characterized by high RF input power handling capabilities and a low forward voltage drop. Additionally, the device has a low reverse leakage current and is able to operate over an extended temperature range.The HSMS-2812-TR1 works by allowing current to flow in one direction and blocking the current in the reverse direction. It is also capable of blocking high reverse volts or storing energy until it is requested by the circuitry.Although Schottky diodes are widely used in many applications, the HSMS-2812-TR1 offers superior performance and reliability compared to traditional diodes. It is able to handle high RF input power, can operate at high frequencies, and exhibits low reverse leakage currents when compared with other diode technology. Additionally, its low capacitance allows it to function as a low-noise switch in radio receivers, reducing noise levels and improving receiver performance.The HSMS-2812-TR1 Schottky diode is also relatively easy to use in RF applications. In addition to its low capacitance, it has a low forward voltage drop, which allows the device to consume less power when compared to traditional diodes. Moreover, its reverse leakage current is also relatively low, making it an ideal solution for high-speed, high-frequency applications.The combination of the various performance characteristics of the HSMS-2812-TR1 makes it an ideal component for high-speed, high-frequency applications. It offers superior performance, reliability, and ease of use compared to other available technologies. The device also provides low noise levels, making it suitable for use in a variety of RF and microwave circuits. As such, the HSMS-2812-TR1 can be used in a variety of applications, ranging from RF/microwave front-end designs, amplifiers, radio receivers, and switches.

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