HSMS-2812-TR2G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HSMS-2812-TR2G is a model of a diode used in radio frequency (RF) applications. It is designed to provide an insertion loss of less than 0.09 dB, very low reverse loss, and a higher dynamic range compared to other diodes. The HSMS-2812-TR2G is commonly used in broadband amplifiers, mixers, oscillators, multipliers and other RF circuit applications. It is a surface-mount package and requires a printed-circuit board or special fixture for mounting.

The HSMS-2812-TR2G is a dual PIN (point-contact injection) or Schottky diode. The dual PIN diode is a semiconductor device made from two different semiconductor materials in a single package. It consists of two P-type and two N-type regions. A voltage applied across the two regions creates an electric field that controls the current that can flow through the diode. As a PIN diode, the HSMS-2812-TR2G exhibits very fast switching performance, low insertion loss, and a high dynamic range.

The working principle of the HSMS-2812-TR2G is that it is biased at cut-off to block DC signals and to sustain higher AC amplitudes. When the voltage applied to the diode\'s terminals is increased, the diode begins conducting current, which causes the frequency of the applied signal to increase. This effect is known as “pinching” and is used to modulate the frequency of the incoming signal. This diode is designed to handle very high power levels and has a good current-handling capability.

The HSMS-2812-TR2G is used in a variety of RF applications. For example, it is used in radio receivers, transmitters, and repeaters. It is also used in the design of filters, modulation equipment, antennas, modulation dividers and multipliers, and frequency synthesizer circuits. Additionally, it is used as a control diode in phase-locked loops, time division multiplexers, and amplitude modulation systems.

The HSMS-2812-TR2G is a high-performance RF diode that is suitable for a wide range of applications. It offers both exceptional switching speed and insertion loss performance, making it an ideal choice for a variety of RF circuit applications. The diode can handle high input voltages, high reverse current, and has a high dynamic range. This makes it an ideal choice for any circuit design that requires accurate signal transfer and control. The HSMS-2812-TR2G is the perfect choice for any demanding, high performance RF circuit design.

The specific data is subject to PDF, and the above content is for reference