HSMS-2813-BLKG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HSMS-2813-BLKG is a diode used for radio frequency (RF) applications. It is an ideal solution for applications such as high speed circuits, radio receivers and transmitters, and other RF applications. The device benefits from a low-voltage screening process that ensures superior performance and superior RF and microwave characteristics. The device also features a low thermal impedance and fast switching speeds.

The HSMS-2813-BLKG is a silicon-based diode with a short reverse recovery time, which helps improve the circuit’s stability. The diode also has a low forward voltage drop and high current-handling capacity, making it a viable option for many high-power RF applications. The device also features a fast switching speed and a low noise floor.

The HSMS-2813-BLKG can be used for a variety of different RF applications including high speed data communications, radio receivers, transmitters and amplifiers, mixers and frequency synthesizers, microwave applications, filters, oscillators, and RF switches. The fast switching speed and low thermal impedance of the device are beneficial for switching circuits such as amplifiers, receivers and transmitters. Additionally, the diode’s high-voltage screening process ensures excellent performance and excellent RF and microwave characteristics.

The device’s working principle is that of a standard diode. In the forward biased state, the diode allows current to flow while in the reverse-biased state, the diode blocks current flow. When used in an RF application, the diode acts as a switch, allowing current to pass through when turned on and blocking current when turned off. The HSMS-2813-BLKG is equipped with a low reverse-leakage current, making it suitable for use in high-speed circuits.

The HSMS-2813-BLKG is a reliable and versatile diode particularly suitable for use in a wide range of high-speed RF applications. Its low-voltage screening process ensures excellent performance characteristics that make it a great choice for many RF applications. The device’s low forward voltage drop and high current-handling capacity make it particularly beneficial for high-power applications. Its fast switching speed and low thermal impedance ensure a stable and reliable operation in switching circuits.

The specific data is subject to PDF, and the above content is for reference