HSMS-2815-TR1G Allicdata Electronics
Allicdata Part #:

516-1816-2-ND

Manufacturer Part#:

HSMS-2815-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY GP LN 20V SOT-143
More Detail: RF Diode Schottky - 2 Independent 20V 1A SOT-143-...
DataSheet: HSMS-2815-TR1G datasheetHSMS-2815-TR1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 20V
Current - Max: 1A
Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143-4
Base Part Number: HSMS-2815
Description

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The HSMS-2815-TR1G is a three-terminal PIN diode, a type of diode specifically designed for use in RF (Radio Frequency) applications. A PIN diode is one of the few semiconductor components used for broadcast applications that do not require triple modulation. This makes it an attractive choice for applications such as wireless modulation, remote control, and analog-to-digital conversion. As a three-terminal device, the HSMS-2815-TR1G can offer better performance than a standard two-terminal device.

The HSMS-2815-TR1G is an RF diode that is well suited for use in remote control and communication systems. The diode is constructed with an internal PIN semiconductor material that provides excellent reverse bias performance. A reverse bias is a voltage applied to the diode so that current flows in the opposite direction. This effectively reduces the forward current which is necessary for reliable performance in high frequency applications.

The HSMS-2815-TR1G has a wide range of applications in both professional and leisure markets. It is commonly used in applications such as remote control signals, television receivers, GPS receivers, oscillators, and microwave frequency applications. When used in these applications, the HSMS-2815-TR1G is designed to provide reliable, high performance operation at high frequencies.

In terms of the diode\'s working principle, the HSMS-2815-TR1G utilizes the PIN (positive-intrinsic-negative) semiconductor material to effectively block current in reverse polarity and allow current to flow in the forward direction. The PIN material is engineered to have a negative temperature coefficient, meaning that when the temperature increases, the forward current is reduced. This feature is important because it ensures that the forward current remains relatively unchanged despite fluctuating temperatures.

The HSMS-2815-TR1G diode also features a high breakdown voltage which ensures that the diode can withstand large reverse voltages without damage. Additionally, the diode is capable of handling up to 12 watts of average power, making it suitable for use in high power applications.

Overall, the HSMS-2815-TR1G RF Diode is an excellent choice for remote control and communication applications due to its ability to provide reliable, high performance operation at high frequencies. This is often a major advantage in high frequency applications compared to using standard diode designs. Moreover, the diode\'s wide range of applications makes it an attractive option for a variety of projects.

The specific data is subject to PDF, and the above content is for reference

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