HSMS-2817-TR1G

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The HSMS-2817-TR1G is a semiconductor diode specifically designed for use in aerospace applications, especially in high-power RF systems. This device is capable of handling power levels up to 2W, while providing emission suppression. It is constructed with a hermetically sealed TO-39 package, ensuring long-term performance and reliability. The diode has an integrated over-temperature protection function and a high-crush resistance which make it an ideal choice for applications with high-power switching requirements.

HSMS-2817-TR1G diodes are used in high-power RF systems to provide emission suppression, allowing the system to meet the requirements set forth in various regulations and standards. The diodes are also commonly used in aerospace applications, such as communications, radar and microwave systems. The device has extremely high reliability, providing long-term performance even in the harshest environment.

The HSMS-2817-TR1G diode works by emitting an electromagnetic pulse. This pulse throws up a barrier between the diode and any other electrical device or component in the system. This barrier prevents the interaction of the electromagnetic fields, thus effectively inhibiting any interference between the two systems. This means that the communication or other data transmission is not disturbed by the operation of the other device. The chip also allows for the adjustment of the pulse strength, allowing for greater control over the emission suppression.

The diode is designed for high-power switching applications, meaning that it is well suited for applications like automotive electronics, military and aerospace systems, and computers. The diode has high reliability and very low losses, which make it an ideal choice for applications that require high switching speeds and high power capability. The chip has a very wide temperature range, from -65°C to +125°C, making it well suited for use in extreme environmental conditions.

The HSMS-2817-TR1G diode is an ideal choice for applications that require high power switching, while providing emission suppression. The hermetically sealed TO-39 package provides long-term performance and reliability, while the integrated over-temperature protection helps protect the diode from high temperatures. The device is compatible with a wide variety of applications and systems, making it a good choice for any high-power RF system.

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