Allicdata Part #: | 516-2235-2-ND |
Manufacturer Part#: |
HSMS-2818-TR1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY GP LN 20V SOT-143 |
More Detail: | RF Diode Schottky - 1 Bridge 20V 1A SOT-143-4 |
DataSheet: | HSMS-2818-TR1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 20V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1.2pF @ 0V, 1MHz |
Resistance @ If, F: | 15 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
Base Part Number: | HSMS-2818 |
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The HSMS-2818-TR1G model is a diodes-RF component developed by Skyworks Solutions Inc. This device is an RFCMOS Schottky diode that acts as a harmonic filter with precise control of the high impedance and low capacitance characteristic over small bandwidths.
The application field of the HSMS-2818-TR1G includes RF switching and RF power control, both in broadcast and other Doherty amplifiers. This device is great for amplifying the signal, filtering out spurious frequencies, and maintaining stable performance over wide frequency ranges.
The HSMS-2818-TR1G provides an efficient and highly reliable performance under many types of operating conditions. This diodes-RF component is designed to provide a low thermal resistance and self-biasing characteristics to minimize power requirements.
The working principle behind the HSMS-2818-TR1G is the Schottky diode. This type of diode is a semiconductor diode with a thin metal-to-semiconductor junction, which exhibits fast switching times and low reverse leakage current. The diode\'s Schottky barrier is created when electrons from the metal surface diffuse into the semiconductor material, which forms the ordinary pn junction.
The Schottky diode features a low forward voltage and a low turn-on voltage, which provide much higher power-handling capability compared to a standard silicon diode. The diode in the HSMS-2818-TR1G uses a low-parasitic Schottky diode design and can maintain a stable conduction path with a minimum drop in output when it is forward biased. With its adjustable device design, this diode can filter out spurious frequency ranges that may otherwise cause interference with the signal.
The HSMS-2818-TR1G is a new type of RFCMOS Schottky diode that features fast switching speed, low reverse leakage current, and low turn-on voltage. It is primarily used for RF switching and RF power control in broadcast and Doherty amplifiers, and for harmonic filtering over a small bandwidth. The diode\'s Schottky barrier is created when electrons from the metal surface diffuse into the semiconductor material, providing a low forward voltage, low power consumption, and a low thermal resistance.
The HSMS-2818-TR1G is an efficient and highly reliable component, designed to provide a stable performance under many types of operating conditions. This sophisticated product has the ability to eliminate excessive interference and provide a high quality signal output. It is a great choice for broadcast and RF power control applications.
The specific data is subject to PDF, and the above content is for reference
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