HSMS-281C-BLKG Allicdata Electronics
Allicdata Part #:

516-1921-ND

Manufacturer Part#:

HSMS-281C-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY GP LN 20V SOT-323
More Detail: RF Diode Schottky - 1 Pair Series Connection 20V 1...
DataSheet: HSMS-281C-BLKG datasheetHSMS-281C-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 20V
Current - Max: 1A
Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The HSMS-281C-BLKG is a general purpose diode that is part of the widely used diodes family–RF (Radio Frequency). It is a high power, low noise, low profile Schottky plastic surface mount diode that is widely used in RF and microwave applications. The diode is a highly reliable and cost-effective device specifically designed for high speed switching, termination, and attenuation applications.

The HSMS-281C-BLKG diode offers excellent performance in terms of switching speed, steep rise and fall times, low series resistance, and low junction capacitance. It features very low power consumption and superior temperature stability.

It is designed to operate over a wide frequency range from 850 MHz up to 26 GHz and a wide dynamic range, from -20 dBm to +20 dBm, making it ideal for use in a wide range of applications.

The HSMS-281C-BLKG diode has a wide range of applications, such as switching, terminating, attenuating, power amplification, switching power supplies, high speed data link applications, and many more. It is widely used in commercial, consumer, and aerospace, defense, and military applications.

The HSMS-281C-BLKG is a Schottky diode that uses a larger junction area than a conventional PN junction diode, creating a lower device temperature, which helps to minimize distortion in RF applications. It is designed to be reverse polarity protected, making it highly reliable and robust for use under extreme conditions. It also offers excellent thermal management and stability.

The working principle of the HSMS-281C-BLKG diode is similar to that of all other diodes. When a voltage is applied to the anode of the diode, electrons flow from the anode and into the cathode, allowing current to flow through the device. When the voltage is removed, the electron flow stops, and the current stops flowing.

The HSMS-281C-BLKG diode has a forward voltage breakdown level of 1.3 volts. This means that if a voltage greater than 1.3 volts is applied to the device, the diode will break down and allow current to flow. This makes it ideal for use in a wide range of RF and microwave applications that require high speed switching and attenuation.

The HSMS-281C-BLKG diode is a versatile and reliable device that is designed for use in a wide range of RF and microwave applications. It is a cost-effective solution for high speed switching, termination, and attenuation applications. It is highly reliable and robust and offers excellent thermal management and stability.

The specific data is subject to PDF, and the above content is for reference

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