HSMS-281C-TR1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A HSMS-281C-TR1G diode, also called a Schottky diode, is a special type of semiconductor diode designed to work in the radio frequency (RF) band of the electromagnetic spectrum. It is becoming more widely used in RF applications due to its excellent RF properties and the fact that it can handle much higher currents at higher frequencies than traditional semiconductor diodes.

The HSMS-281C-TR1G is an ideal choice for RF systems that require fast switching, low noise, and/or wide bandwidth. It is commonly used in mobile wireless applications such as mobile phones and Wi-Fi systems, as well as various other RF applications. It is also widely used in RF noise suppression circuits, RF switching circuits, and antenna applications.

The HSMS-281C-TR1G operating principle is based on the principles of a PN junction, a junction between two different types of semiconductor materials, known as P-type and N-type. The junction acts as a reverse biased diode, with current only flowing when the voltage exceeds a certain threshold, and then flowing until the voltage drops below the threshold. The threshold voltage is known as the Schottky Voltage, and this is the primary criterion over which these diodes are compared.

The device has an inherent high frequency performance made possible through its small physical size and the low capacitance of its Schottky junction. The low capacitance allows for higher operating speeds, leading to a maximum operating frequency of up to 10 GHz. The HSMS-281C-TR1G is also a low noise device, as its low capacitance also reduces the amount of thermal noise generated within the diode.

The HSMS-281C-TR1G can also handle high levels of power, making it well suited for use in high power communication systems. Its high power capability is provided by its low forward voltage drop and its small junction capacitance, allowing for high reverse power levels without the need for cooling or other thermal control measures. This allows the device to handle high power levels without generating excessive levels of heat.

The HSMS-281C-TR1G is characterized by its fast switching speed, low noise, high power handling capabilities, and wide bandwidth. Its small size and low capacitance allow it to operate up to frequencies as high as 10 GHz, while its low noise and power rating make it suitable for use in high power communication systems. Its fast switching speed and wide bandwidth allow it to be used in a variety of RF applications, making it an excellent choice for applications requiring RF switching, RF noise suppression, and antenna applications.

The specific data is subject to PDF, and the above content is for reference