Allicdata Part #: | HSMS-281F-BLKG-ND |
Manufacturer Part#: |
HSMS-281F-BLKG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY GP LN 20V SOT-323 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 20V 1A ... |
DataSheet: | HSMS-281F-BLKG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 20V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1.2pF @ 0V, 1MHz |
Resistance @ If, F: | 15 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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HSMS-281F-BLKG (HSMS-281F-BLKG) is a diode that can be used in applications such as microwave, RF and power. The HSMS-281F-BLKG employs a glass-filled PTFE package, which is ideal for use in high-frequency and high-voltage circuits. The HSMS-281F-BLKG has an operating frequency of up to 18 GHz, a reverse bias of 5 V, and a peak pulse power of 200W.
The HSMS-281F-BLKG diode is manufactured with a silicon junction and its internal structure consists of a variable layer of Silicon Germanium diode grown on a single crystalline silicon substrate. The internal structure of the diode creates a junction capacitance and a junction capacitance capacitance, which has a very high reverse bias voltage. When a reverse bias voltage is applied to the diode, electrons are being pushed away from the junction, thus creating a depletion zone. This depletion zone reduces the amount of electrons that can cross the junction, resulting in a depletion region. As the reverse bias voltage increases, the depletion region tends to increase. This effect decreases the effective capacitance of the diode and therefore reduces the capacitance of the diode.
In addition to its high-frequency, high-voltage capabilities, the HSMS-281F-BLKG also offers a wide range of output voltage and current ranges. It has a wide range of operating temperature and storage temperature ranges, and has a maximum operating temperature of +150°C. The diode also has good thermal conductivity and low noise capabilities, which are essential in many RF applications. In addition, the diode is available in a variety of package sizes and is designed to be compatible with all industry package standards.
The HSMS-281F-BLKG is an ideal choice for a wide range of RF applications, such as radio frequency power amplifiers, preamplifiers, RF transceivers, and RF receivers. Its excellent frequency range, temperature stability, and thermal conductivity make it an ideal choice for high-frequency, high-power applications. The diode also offers excellent voltage and current handling capabilities, allowing it to be used in many different applications.
When using the HSMS-281F-BLKG, it is important to choose the proper package size, voltage, and current range for the application. It is also important to carefully review the manufacturer\'s data sheets to ensure that the diode will operate properly with the intended application and provide the desired performance. Additionally, it is always important to read the installation instructions before using the diode, as any improper installation can lead to damage to the diode or reduced performance.
The specific data is subject to PDF, and the above content is for reference
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