HSMS-281F-TR1G Allicdata Electronics
Allicdata Part #:

HSMS-281F-TR1G-ND

Manufacturer Part#:

HSMS-281F-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY GP LN 20V SOT-323
More Detail: RF Diode Schottky - 1 Pair Common Cathode 20V 1A ...
DataSheet: HSMS-281F-TR1G datasheetHSMS-281F-TR1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 20V
Current - Max: 1A
Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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Diodes are some of the most basic active semiconductor devices. They are used to control the flow of electricity in circuits. The HSMS-281F-TR1G is a type of diode that is commonly used in Radio Frequency (RF) applications. In this article, we will discuss the application field and working principle of the HSMS-281F-TR1G.

The Application Field

The HSMS-281F-TR1G is a Schottky diode that is designed for high-frequency radio applications. This device is commonly used for wired and wireless communication systems; such as, Satellite Communications (SATCOM) systems and Point-to-Point microwave systems. It is also used in RF receivers, such as in Television or radio tuners. This diode is also used in Transmitters and up to 40 GHz. For these RF applications, the device is highly reliable due to its high-temperature operation, which can be used up to + 175°C.

The HSMS-281F-TR1G can also be used as a voltage regulator. It is ideal for this application as it has a low forward voltage drop; which allows for less heat dissipation. This device also has a very low capacitance, which makes it suitable for high-frequency switching applications.

The Working Principle

In a diode, the movement of electrons is controlled by the junction between a p-type and n-type material. This junction, known as the pn junction, is a two-terminal device. When a positive voltage is applied to the p-type material and a negative voltage is applied to the n-type material, the junction allows the flow of current through it. This is known as a forward bias.

When the voltage is reversed, the junction acts as a barrier that prevents the flow of current. This is known as a reverse bias. This is the main principle that is used in the HSMS-281F-TR1G. The diode is designed such that it can handle high frequencies, allowing it to be used for radio applications.

The HSMS-281F-TR1G is designed for high-frequency applications, such as radio and television. It has a low forward voltage drop, making it suitable for voltage regulation applications as well. This diode is also able to handle temperatures up to + 175°C, making it highly reliable for RF applications.

In conclusion, the HSMS-281F-TR1G is a Schottky diode that is typically used in Radio Frequency applications. Its low forward voltage drop and high-temperature operation make it suitable for these applications. It is also used for voltage regulation and in high-frequency switching applications. With its reliability and performance, the HSMS-281F-TR1G is ideal for RF applications.

The specific data is subject to PDF, and the above content is for reference

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