HSMS-281K-TR1G

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Diodes - RF

The HSMS-281K-TR1G is one of the best performing RF diodes available on the market today. It is a high-speed, low-noise 50 ohm Schottky barrier rectifier die. This RF diode provides very precise rectification of RF signals, making it a great choice for semiconductor applications that demand precise control of the switching characteristics of a diode.

Application Fields

The HSMS-281K-TR1G can be used in a variety of applications including:

• RF switching
• RF diode detectors
• Low noise amplifiers
• Antenna couplers
• Phase shifters
• Gain control
• RF mixing

Working Principle

The HSMS-281K-TR1G works by allowing forward current to flow through the diode as the voltage increases. As the current level increases, the effective device capacitance decreases and the switching time increases. This reverse reactance prevents reverse current from being able to flow through the diode, providing a very precise rectification characteristic. The HSMS-281K-TR1G has a reverse breakdown voltage of 62 volts and can handle up to 3 amps of forward current.

The HSMS-281K-TR1G features high-speed switching of up to 3 gigahertz, an integrated low-noise diode detect circuit, and a low turn-on voltage. The low turn-on voltage allows the device to switch rapidly at much lower input power levels, enabling the device to provide better reliability and higher performance in applications that require precise switching characteristics.

Conclusion

The HSMS-281K-TR1G is a high-speed, low-noise Schottky barrier rectifier die with a precise rectification characteristic. It is well suited for RF switching, diode detectors, low noise amplifiers, antenna couplers, phase shifters, gain control, and RF mixing applications. The HSMS-281K-TR1G is capable of switching up to 3 oscillations/second, and has a reverse breakdown voltage of 62 volts and can handle up to 3 amps of forward current.

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