HSMS-281L-BLKG Allicdata Electronics
Allicdata Part #:

516-2844-ND

Manufacturer Part#:

HSMS-281L-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY GP LN 20V SOT-363
More Detail: RF Diode Schottky - 3 Independent 20V 1A SOT-363
DataSheet: HSMS-281L-BLKG datasheetHSMS-281L-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Diode Type: Schottky - 3 Independent
Voltage - Peak Reverse (Max): 20V
Current - Max: 1A
Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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HSMS-281L-BLKG is a type of RF diode that is commonly used in electronic circuits. It has been in use since the mid-1960s and is still widely used today. It is a highly reliable and cost-effective device, offering a high signal-to-noise ratio and an excellent power-handling capacity. This device is capable of handling high-frequency signals up to 10GHz and is used in a wide variety of applications.

The HSMS-281L-BLKG can be used in a variety of applications, including communication systems, electronic test and measurement systems, data conversion, and frequency synthesis. It is also used in broadband communications systems and digital signal processing. The device is capable of providing low off-isolation, high-de-sensitivity attenuation, and high-Q performance over a wide frequency range. The HSMS-281L-BLKG is also widely used in various medical applications, such as X-ray imaging and medical equipment testing.

The HSMS-281L-BLKG is a three-terminal device. The anode is the input terminal and the cathode is the output terminal. The third terminal (the gate) is used to control the device. When a voltage is applied to the gate, the electrons in the anode and cathode are allowed to move across the depletion region, and current flows through the diode. This is called forward bias. In reverse bias, a negative voltage is applied to the gate, which prevents the electrons in the anode and cathode from moving across the depletion region. This produces a much lower current than in forward bias.

The HSMS-281L-BLKG is a high-frequency diode. It is capable of handling signals up to 10GHz and can provide high-frequency isolation, low-frequency isolation, and low-noise isolation, as well as excellent high-power handling capacity. The HSMS-281L-BLKG is ideal for use in applications such as communication systems, frequency synthesis, data conversion, and medical applications.

The HSMS-281L-BLKG is capable of providing a high degree of reliability and has been designed to provide a long product life. The HSMS-281L-BLKG is ideal for use in applications that require a high level of robustness and reliability. It is also widely used in various medical applications due to its low-noise, high-frequency response, and high-power-handling capability.

HSMS-281L-BLKG is a reliable and cost-effective RF diode. It is used in many electronic circuits and is capable of providing a high-frequency response, high-power-handling capacity, and excellent noise-isolation. The HSMS-281L-BLKG is an ideal choice for applications that require high-frequency, high-power, and low-noise performance.

The specific data is subject to PDF, and the above content is for reference

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