HSMS-2820-TR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HSMS-2820-TR1 is among the few high-performance dual series diodes that offer the best paths for reliable and efficient signal switching in wireless communications solutions. It was designed specifically for applications operating in the high-frequency and ultra-wideband frequency range and is characterized by extremely low insertion loss, very high linearity, and a wide range of impedance control.

The HSMS-2820-TR1 is primarily utilized in high-frequency, ultra-wideband radio frequency (RF) applications such as radio transceivers, wireless local area networks (WLAN), and microwave links. The main application fields for the HSMS-2820-TR1 are in the areas of low-noise amplification (LNA), input/output matching networks, power amplifiers, and switches.

The HSMS-2820-TR1 is a high-performance, dual series diode that combines a low-noise, high-linearity FET, a wideband shunt diode, and a transmission line bridge all in a single package. It has a low threshold voltage of 1.3V and provides a very low turn-on voltage, which makes it ideal for applications such as gate switch circuits and direct modulation circuits. This device also features a high reverse bias breakdown voltage of 6.5V, making it very easy to use in high power applications. The small package size of the HSMS-2820-TR1 also allows it to be easily integrated into existing solutions without sacrificing performance.

The working principle of the HSMS-2820-TR1 is based on the transmission line bridge (TLB) concept. The TLB is operated by switching between two active devices, the high-frequency FET and the wideband shunt diode. When an RF signal is applied to the TLB, the FET operates in its linear mode, providing low-noise amplification, while the diode clips off any excessive signal components above the bias voltage level. This helps to ensure a high linearity performance over a wide frequency range. Additionally, when the TLB is properly biased, the inductive elements of the FET, the DC feed lines and the shunt diodes interact with each other, allowing for a wide range of impedance control.

In conclusion, the HSMS-2820-TR1 is an advanced dual-series diode that offers a reliable, low-noise, and high-linearity signal switching solution for wireless communications applications. Its wide range of impedance control, low insertion loss, and high reverse bias breakdown voltage make it an ideal choice for applications operating in the high-frequency and ultra-wideband frequency range. The small package size and high performance of the HSMS-2820-TR1 also allow for easy integration into existing solutions without sacrificing performance.

The specific data is subject to PDF, and the above content is for reference