HSMS-2823-TR1G

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TheHSMS-2823-TR1G is a diode for Radio Frequency (RF) applications that is built by Avago Technologies. It is a dual sided coaxial PIN diode based on the company’s high-performance MEMS technology. The diode operates within a wide frequency range of DC to 4.0 GHz and provides excellent attenuation of up to 0.25 dB. It boasts a low insertion loss of 0.15 dB and low reverse leakage current of 1 μA at +25°C.

The HSMS-2823-TR1G has an offered power rating of +19 dBm and peak dynamic range of +18 dBm. It features a low-distortion performance with an third-order intercept point of +22 dBm as well as inherent scalability for impedance matching. The diode is ideal for use in RFI-sensitive applications such as wireless infrastructure, medical equipment, and test and measurement systems.

The HSMS-2823-TR1G is fully hermetic with a standard operating temperature range of -40°C to +85°C. It is available in an 8-lead PPS-2 and RoHS-compliant SO16 E-pad package, allowing it to be easily mounted and handled. The device is certified to meet applicable safety, EMC, and environmental standards, and is RoHS-compliant.

The working principle of the HSMS-2823-TR1G is based on the same principles as a traditional PIN diode. It works through a combination of series and parallel circuit patterns, using a single PIN diode with two external bias connections. When the bias voltage is applied to the cathode, the device acts as a resistive “stop”, reducing the transmission of any signal current passing through it. This allows for adjustable attenuation for sensitive electronic components.

The dual sides of the HSMS-2823-TR1G allow for the simultaneous electrical control of two separate bias signals, allowing the insertion loss and gain of two separate parts of the circuit to be adjusted separately. This gives the device greater versatility when used in applications such as phase shifters, power control, and frequency-division multiplexing. The device is also well-suited to applications where impedance matching is required, as it can selectively reduce the level of the received signal or increase the gain of the amplifier.

In summary, the HSMS-2823-TR1G is a dual-sided PIN diode designed for RF applications. It has a wide frequency range of DC to 4.0 GHz, a peak dynamic range of +18 dBm, low insertion loss, and low reverse leakage current. Its working principle is based on the same principles as a traditional PIN diode and it can be used in applications such as frequency-division multiplexing and power control.

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