Allicdata Part #: | HSMS-2827-TR1-ND |
Manufacturer Part#: |
HSMS-2827-TR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY RF 15V 1A SOT-23 |
More Detail: | RF Diode Schottky - 1 Bridge 15V 1A SOT-143-4 |
DataSheet: | HSMS-2827-TR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 15V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 12 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
Base Part Number: | HSMS-2827 |
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The HSMS-2827-TR1 device is a high frequency, high power, and high efficiency switching diode. It is part of a family of technologically advanced, solid-state diodes for radio frequency (RF) applications. These devices are built with high modulation bandwidths, high power density, and low loss to enable efficient switching and reliable operation in RF environments. The main application fields for the HSMS-2827-TR1 are wireless communications systems, high frequency amplifiers, and enthusiasts who require a highly reliable and efficient switching element.
The HSMS-2827-TR1 is a bare die form device and offers a range of features that make it ideal for high performance RF applications. Its function is to transmit and receive signals efficiently over the desired frequency range, while providing the needed characteristics for high power levels and excellent linearity. The device is able to operate up to 3 GHz with typical results of 15 dB power gain and return loss of 10 dB or better. Furthermore, its noise figure is an impressive 2 dB. Its power gain can be increased by further amplification, if desired.
The HSMS-2827-TR1 attributes excellent operating characteristics to its planar structure. This device has a low capacitance of 1.8 pF and a the on resistance of 0.4 Ω. This feature allows the device to be used in a wide variety of RF applications. The device also offers up to 36 V reverse bias, enabling a maximum current of 200 mA. All of these features make the HSMS-2827-TR1 ideal for high power and high frequency applications.
The HSMS-2827-TR1 works in two general modes. In the first mode, the diode is operated in the forward biased region, allowing direct current (DC) signals to flow across its terminals. In this region, the diode acts as an amplifier and the signal power level is substantially boosted. The second mode is when the diode is operated in the reverse biased region and it acts as an attenuator or impedance matching device. This mode can be used to keep the signal level within the desired range within the required bandwidth.
Overall, the HSMS-2827-TR1 is an excellent device for high frequency radio applications. It supports high power levels and wide bandwidths, allows for efficient switching, and provides excellent linearity. With its wide array of features and capabilities, it is a great choice for minimizing time-to-market as well as costs associated with putting together a reliable and efficient RF system.
The specific data is subject to PDF, and the above content is for reference
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