Allicdata Part #: | HSMS-2827-TR1G-ND |
Manufacturer Part#: |
HSMS-2827-TR1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY RF QD 15V SOT-143 |
More Detail: | RF Diode Schottky - 1 Bridge 15V 1A SOT-143-4 |
DataSheet: | HSMS-2827-TR1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 15V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 12 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
Base Part Number: | HSMS-2827 |
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The HSMS-2827-TR1G is an important component of diode-based RF technology. It is a superbly engineered, high-voltage Schottky Barrier Diode that is equipped with its own package and is extremely durable. It is used to provide protection against high-frequency signals and to help reduce voltage drop and noise in various circuits.
The HSMS-2827-TR1G is a Schottky barrier diode with low power and low-voltage operation. It is designed to achieve high switching frequencies and excellent RF performance in a small package with an extended temperature range. It has a low forward voltage drop which contributes to its low power capability. As a result, the HSMS-2827-TR1G is well suited for use in a wide variety of RF applications.
The HSMS-2827-TR1G is optimized for use in RF front-end applications such as mixers, amplifiers, DC-DC converters, and switched-mode power supplies. Its excellent RF performance makes it an ideal choice for use in these devices. Furthermore, the diode is capable of operation in operating temperature ranges up to 125 degrees Celsius and can handle voltages up to 200V.
The HSMS-2827-TR1G uses a process called reverse recovery. This process begins when the device turns off by becoming reversed biased. The diode builds up a charge until it reaches a point where it is unable to maintain the reverse bias voltage. At this point, the stored charge is discharged at a rapid rate and produces a very short pulse of current. This reverse recovery time is very short compared to other types of diodes.
The HSMS-2827-TR1G is a very reliable device and well-suited to many high-frequency applications. Its low forward voltage drop makes it ideal for use in low-power systems and its high threshold voltage and reverse recovery time ensure it can safely handle high-frequency signals and protect circuits from voltage drops and noise.
In addition, the HSMS-2827-TR1G\'s low power capability and extended temperature range make it suitable for use in many types of RF applications. This includes applications like cellular base stations, RFID readers, and in-home Wi-Fi systems. It is also ideal for powering components used in communication systems such as VSATs, telephone switches, and microwave radios.
The HSMS-2827-TR1G is an excellent choice for many Schottky diode-based applications. Its low power and reverse recovery time, low forward voltage drop, and high threshold voltage make it a great choice for use in many kinds of RF-based applications. It can be used to reduce voltage drops and noise in many circuits, and to provide protection against high-frequency signals.
The specific data is subject to PDF, and the above content is for reference
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