Allicdata Part #: | HSMS-2828-TR2G-ND |
Manufacturer Part#: |
HSMS-2828-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY RF QD 15V SOT-143 |
More Detail: | RF Diode Schottky - 1 Bridge 15V 1A SOT-143-4 |
DataSheet: | HSMS-2828-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 15V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 12 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
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Diodes are a type of solid-state switch, consisting of two terminals--the anode and the cathode. They act as a check gate, allowing current to pass through the device when a certain voltage is applied across its terminals. In RF applications, diodes are used to either pass or block high-frequency signals and protect sensitive components from voltage spikes.
One of the most popular types of diodes for use in RF applications is the HSMS-2828-TR2G. This diode is a Surface Mounted Silicon Schottky Barrier Rectifier developed by Vishay Semiconductors. It is designed for high-speed switching applications, such as RF power amplifiers, RF switches, and many other circuit applications in the frequency range of 2.5 GHz to 10 GHz.
The main characteristics of the HSMS-2828-TR2G diode include: a low forward voltage drop of 0.45V, a low capacitance of 0.75pF, and a low reverse leakage current of 1.5µA. All of these features combine to make the HSMS-2828-TR2G a great choice for use in RF applications that require fast switching and high levels of performance.
The working principle of the HSMS-2828-TR2G diode is quite simple. When a positive voltage is applied to the anode terminal, current flows through the diode and it is turned on. This allows the current to pass through the diode and continue on to the load. When the voltage across the terminals is reversed, the diode is turned off and no current can pass through the device. The Schottky Barrier effect allows this device to switch quickly between these two states.
The HSMS-2828-TR2G diode is used in a variety of RF applications including RF power amplifiers, RF switches, and more. It is ideal for use in high-speed applications that require high levels of performance. Its low forward voltage drop, low capacitance, and low reverse leakage current make it a great choice for applications that need to switch quickly between two states.
The HSMS-2828-TR2G diode is a great choice for applications that require high degrees of reliability and performance. Thanks to its fast switching capabilities and low power consumption, it is well suited for use in a variety of RF applications in both consumer and commercial settings. Its fast switching capabilities make it especially useful in applications that require switching between two states quickly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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