Allicdata Part #: | HSMS-2829-TR1G-ND |
Manufacturer Part#: |
HSMS-2829-TR1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY RF QD 15V SOT-143 |
More Detail: | RF Diode Schottky - Cross Over 15V 1A SOT-143-4 |
DataSheet: | HSMS-2829-TR1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - Cross Over |
Voltage - Peak Reverse (Max): | 15V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 12 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
Base Part Number: | HSMS-2829 |
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Diodes, also known as rectifying junctions, are two-terminal semiconductor devices that conduct an electrical current in one direction, from the Anode to the Cathode. The HSMS-2829-TR1G diode, part of the High Speed MOSFET Small Signal (HSMS) product line, is a Surface-Mount Technology (SMT) device that combines low capacitance and high-speed capacitance in a small package. This diode is available in tape-and-reel form, making it suitable for automated manufacturing applications.
The HSMS-2829-TR1G is an essential component in electronic designs, and can be used in a wide range of applications such as RF amplifiers, RF switching and antenna tuning. It has an avalanche breakdown voltage of 28V and a maximum current rating of 1A. The capacitance range of the HSMS-2829-TR1G is 0.08 - 0.24pF, making it especially suitable for high-frequency applications.
In addition to its high speed and small package size, the HSMS-2829-TR1G has several other features that make it an attractive choice for RF applications. It is constructed using a silicon substrate, which enables it to tolerate higher temperatures than other types of rectifying junctions. It also has a low power dissipation rating of just 70mW, making it suitable for use in low-power applications. Finally, the HSMS-2829-TR1G is RoHS compliant, meaning it can be used in most electronics systems.
The working principle of the HSMS-2829-TR1G diode is based on the PN junction. When the forward voltage is applied, the depletion region of the diode increases its thickness, forming the rectifying junction between the Anode and the Cathode. Electrons are then allowed to flow from the Anode to the Cathode, creating a forward current. This current is proportional to the applied forward voltage and can be used for different applications.
The HSMS-2829-TR1G is suitable for a variety of RF applications, such as RF amplifiers, RF switches and antenna tuners. It is also suitable for high-speed and low-power applications due to its low capacitance, small package size and low power dissipation. Additionally, its RoHS compliant design makes it suitable for use in most electronic systems.
The specific data is subject to PDF, and the above content is for reference
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