Allicdata Part #: | HSMS-2829-TR2G-ND |
Manufacturer Part#: |
HSMS-2829-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY RF QD 15V SOT-143 |
More Detail: | RF Diode Schottky - Cross Over 15V 1A SOT-143-4 |
DataSheet: | HSMS-2829-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - Cross Over |
Voltage - Peak Reverse (Max): | 15V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 12 Ohm @ 5mA, 1MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
Base Part Number: | HSMS-2829 |
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Diodes are essential components in the construction of many circuits. They are used to allow current to flow in one direction while blocking it in the opposite direction. In a radio-frequency (RF) diode, current is blocked in one direction up to a certain frequency and is allowed to flow in the other direction up to the same frequency. The HSMS-2829-TR2G RF diode is one of the most popular and widely used such components due to its wide range of applications and reliable performance.The HSMS-2829-TR2G is a Schottky Barrier Diode that is designed for broadband operation in the 2-2.8GHz frequency range. It has low noise figure, low leakage current, high surge current handling capabilities and a high breakdown voltage which make it ideal for applications in RF power amplifiers, active antennas, and more. This diode can also be used in noise-free circuits, where the low resistance of this device allows for the rapid transfer of noise-free digital signals.At the core of the HSMS-2829-TR2G is its working principle. Its Schottky barrier (SB) structure is responsible for the device\'s low-noise, low-leakage current, and high breakdown voltage performance. The SB structure is formed by a metal contact deposited on top of an N-type semiconductor layer and separated from it by an insulating layer, which is typically an oxide or nitride. When a voltage is applied between the anode and cathode, the metal work function induces an electric field, which reduces the height of the Schottky barrier and increases the current flow between the two contacts. This phenomenon is known as “forward bias” and allows current to flow in the forward direction.The reverse bias operation of the HSMS-2829-TR2G is responsible for its blocking capabilities. When a voltage is applied to the diode in the opposite direction, the Schottky barrier increases in height, which reduces the current flow between the contacts. This allows the device to block the current in the opposite direction, thus ensuring that no unwanted signals are present in the circuit.Due to its wide range of applications in both digital and RF circuits, the HSMS-2829-TR2G is an essential component of many designs. The device\'s reliable performance and its ability to operate in a variety of modes make it one of the most commonly used RF diodes on the market today. It is also one of the most cost-effective components for many circuits, making it an ideal choice for many applications. This versatile device is sure to remain popular for many years to come.
The specific data is subject to PDF, and the above content is for reference
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