| Allicdata Part #: | HSMS-282B-TR2G-ND |
| Manufacturer Part#: |
HSMS-282B-TR2G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Broadcom Limited |
| Short Description: | DIODE SCHOTTKY RF SGL 15V SOT323 |
| More Detail: | RF Diode Schottky - Single 15V 1A SOT-323 |
| DataSheet: |  HSMS-282B-TR2G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Schottky - Single |
| Voltage - Peak Reverse (Max): | 15V |
| Current - Max: | 1A |
| Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
| Resistance @ If, F: | 12 Ohm @ 5mA, 1MHz |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323 |
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HSMS-282B-TR2G application field and working principle
The HSMS-282B-TR2G is an RF diode developed by NXP Semiconductors. It is designed for use in RF applications, providing wide range of low-noise performance and gain linearity. The device is ideal for use in a variety of radio applications, such as when GPS, Wi-Fi, Bluetooth, and many other wireless systems require low noise figures. It is also suitable for use in production testing of RF components and integrated circuits.
Application Uses
The HSMS-282B-TR2G is suitable for a variety of applications that require low-noise performance and gain linearity. It is ideal for use in radio applications such as high bandwidth digital transmission, internal receiver tuning, low noise amplifiers and in general baseband signal amplifiers. In addition, the device is an excellent choice for use in the production testing of RF components and integrated circuits.
Working Principle
The HSMS-282B-TR2G is based on a PIN diode. A PIN diode is a two-terminal semiconductor device that exhibits a direction dependence in its electrical properties, with a higher resistance when current is flowing in one direction than when it is flowing in the other direction. This two-terminal device is made up of a heavily doped intrinsic layer in between two other layers of lightly-doped material, from which its name PIN is derived, standing for “P-type, Intrinsic, N-type”. The HSMS-282B-TR2G is an application specific PIN diode, and it has a unique structure of P-type, intrinsic, and N-type layers. When electrical current is applied to the PIN diode, holes in the one layer recombine with electrons in the other layer, creating a barrier between the layers that restricts the flow of electrical current through the device.
Features
- Low noise performance
- Gain linearity
- High reverse current temperature coefficient
- Large current capacity
- Resistance to radiation
The HSMS-282B-TR2G also offers excellent thermal stability and high stability of characteristics over a wide temperature range. As a result, it can be used in applications where conditions may vary greatly, such as in high-altitude flight, automotive and military communications. The device is designed to operate at frequencies of up to 8 GHz, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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