HSMS-282E-TR1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are semiconductor devices that have two electrodes. They allow an electric current to flow in one direction but not the other, and can be used to control the flow of current in circuits. The HSMS-282E-TR1G diode is one type of diode used for radio frequency (RF) applications. This article will discuss the application field and working principle of this device.

The HSMS-282E-TR1G is an ultra-small surface-mount gallium arsenide (GaAs) Schottky diode. It is designed primarily for RF applications, such as RF amplifiers, power detectors, oscillators, and DC-DC converters. The diode has a low capacitance of just 0.28pF and a low-inductance power pad. It is available in an SOT-23 package, which is extremely small and efficient, allowing it to be used in space-constrained applications. The device also has a low-thermal resistance that allows it to operate in high-power and high-frequency circuits.

The HSMS-282E-TR1G operates according to the Schottky diode effect. When a voltage is applied across the diode, electrons from the N-type and holes from the P-type semiconductor material flow across the junction. This creates an electrical field that acts as a barrier to the electrical current flow. This diode has a low voltage drop across the barrier, allowing it to efficiently convert AC to DC, and it provides a low capacitance and inductance that is beneficial for RF applications.

The HSMS-282E-TR1G can be used in a variety of RF circuits. Some applications include power switching and RF signal routing, as well as amplifier, filter and mixer circuits. This diode can also be used in low-noise converters, doubling circuits, active antennas and other circuits requiring low capacitance. It can even be used in high-speed switching, such as in optoelectronic applications.

The HSMS-282E-TR1G is a versatile, efficient and reliable diode for RF applications. Its small size allows it to be used in space-constrained circuits, while its low capacitance and low-inductance power pad allow it to be used in high-frequency circuits. Additionally, its low voltage drop across the barrier makes it ideal for efficient AC/DC conversion in RF applications. The diode is an excellent choice for use in a variety of different circuits, and its Schottky diode effect ensures reliable operation.

The specific data is subject to PDF, and the above content is for reference