HSMS-282M-TR1G Allicdata Electronics
Allicdata Part #:

HSMS-282M-TR1G-ND

Manufacturer Part#:

HSMS-282M-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY RF QD 15V SOT-363
More Detail: RF Diode Schottky - 2 Pair Common Cathode 15V 1A ...
DataSheet: HSMS-282M-TR1G datasheetHSMS-282M-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 2 Pair Common Cathode
Voltage - Peak Reverse (Max): 15V
Current - Max: 1A
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 12 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The HSMS-282M-TR1G is a high-frequency small-signal Schottky diode. This diode is widely used in communications, broadcasting, and radar systems, amongst a wide range of other applications.

The diode has been designed for use in RF applications, and its main function is to suppress unwanted harmonic frequencies in order to decrease interference between multiple frequencies. It is a standard, low-noise, low-distortion type device, making it suitable for a variety of ultra-high frequency applications. The device also has low capacitance, and thus minimal signal attenuation.

The HSMS-282M-TR1G has a peak working frequency of 14GHz, and a peak storage temperature of +85oC. It is packaged in a surface-mount package, and has a wide range of applications across all types of electronic components.

The working principle of the diode is based on the PN junction between a Schottky barrier and a silicon substrate. When a large voltage is applied across the diode, electrons are attracted from the P type side of the junction, to the N type side. This causes a depletion layer to form, and a barrier potential to be generated, which inhibits the current flow between the two sides. This creates an electrical barrier which, when combined with the charge carriers of the N type side and the Schottky barrier, creates a negative resistance.

When an RF signal is applied to the diode, it produces an AC signal at the negative resistance, which can be measured with an oscilloscope. When the signal changes, so does the electrical barrier, allowing current to flow through the device. This signal is then used to measure the frequency of the RF signal, and helps suppress unwanted harmonic frequencies.

The HSMS-282M-TR1G is used in a variety of fields, from telecommunications to radar and broadcasting. Its ability to measure frequency and suppress harmonic frequencies makes it an invaluable tool for all sorts of radio applications, and its small size makes it suitable for use in compact, portable devices. Plus, its wide range of applications across all types of electronic components makes it a popular choice for many different purposes.

The specific data is subject to PDF, and the above content is for reference

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