HSMS-282M-TR2G Allicdata Electronics
Allicdata Part #:

HSMS-282M-TR2G-ND

Manufacturer Part#:

HSMS-282M-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY RF QD 15V SOT-363
More Detail: RF Diode Schottky - 2 Pair Common Cathode 15V 1A ...
DataSheet: HSMS-282M-TR2G datasheetHSMS-282M-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 2 Pair Common Cathode
Voltage - Peak Reverse (Max): 15V
Current - Max: 1A
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 12 Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The HSMS-282M-TR2G diode is a popular diode within the field of RF (Radio Frequency) applications. It is small and versatile but able to provide excellent performance, making it popular among enthusiasts and experts alike.

The HSMS-282M-TR2G diode is a dual junction Schottky barrier diode that is especially suited for use in RF applications. It is part of the family of devices classified as HSMS (High Speed MESFET Schottky) diodes. It is designed for frequencies up to 2.0 GHz and contact-less switching applications.

The dual junction design of the HSMS-282M-TR2G makes it ideal for RF applications, as it offers high speed switching and superior isolation properties. The diodes offer excellent high frequency switching performance and they are tolerant of wide variations in temperature and voltage. They are also extremely reliable, making them a common choice for applications where performance and reliability must be balanced.

In terms of its operating principle, the HSMS-282M-TR2G utilizes a Schottky barrier diode to achieve high speed switching. A Schottky diode consists of a metal-semiconductor junction, which can be tuned to obtain high speed switching. When the current passes through the metal-semiconductor junction, the low voltage drop across it allows for high speeds.

The HSMS-282M-TR2G also utilizes a special contact-less switching technique. This technique allows for contact-less switching at higher speeds than with traditional switching techniques. The contact-less switching technique also offers superior isolation, which reduces interference and improves the overall system performance.

The HSMS-282M-TR2G is popular in a variety of RF applications, including low noise amplifiers, receivers, transmitters, transmit-receive switches and frequency converter circuits. It is also used in high frequency switching and contact-less switching applications.

Overall, the HSMS-282M-TR2G is a popular choice for RF applications. Its dual junction design and contact-less switching technique offer superior performance and reliability, making it a common choice for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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