HSMS-282N-TR2G

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The HSMS-282N-TR2G is a high-performance RF diode used in a variety of commercial and military applications. The diode is a low-noise, low-capacitance, and low-voltage depletion-mode Schottky diode used to protect sensitive RF applications from high-power RF signals. It is designed to operate at frequencies from 0.25GHz to 150GHz, and its rated power is 1W for a single device.

The HSMS-282N-TR2G has a variety of applications, including RF communication for cellular and satellite applications, RF signal detection and processing, and RF switching. The device is most commonly used in radio-frequency receiver phase detectors, mixers, and phase modulators, as well as low-frequency attenuators and switching circuits. The diode’s low-noise and low-voltage characteristics make it well-suited for use in high-bandwidth systems. It is also used in high-reliability systems requiring low-capacitance transistors or RF switches.

The working principle of the HSMS-282N-TR2G is based on the Schottky diode. A Schottky diode is a silicon semiconductor component formed from a junction of a semiconductor and a metal. The device works by allowing current to flow in only one direction, known as rectification, and by blocking the current when the reverse-bias voltage is applied. In the HSMS-282N-TR2G, a highly doped P-type substrate forms the junction with the gold plated Ni-base metal contact, creating a highly efficient RF diode device.

The device has a dual-gate structure which allows for high dynamic range, low-distortion, and low-noise operation. The dual gate structure enables the diode to be driven with two separate gate voltages for a wide range of RF signal levels and high gain dynamic range. The device also features a low capacitance between the gates, which reduces the loading of an RF wave and ensures low signal-distortion. The low capacitance also increases the device’s reliability and stability.

The HSMS-282N-TR2G offers excellent performance as an RF diode, making it an ideal choice for a variety of RF applications. The device’s low-voltage and low-noise characteristics make it especially suitable for high-bandwidth applications, while its low capacitance ensures low noise and accurate signal processing. These features make the HSMS-282N-TR2G an ideal choice for a wide range of RF diode applications.

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