HSMS-2850-BLKG Allicdata Electronics
Allicdata Part #:

516-1931-ND

Manufacturer Part#:

HSMS-2850-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECT SS SOT23
More Detail: RF Diode Schottky - Single 2V SOT-23-3
DataSheet: HSMS-2850-BLKG datasheetHSMS-2850-BLKG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 2V
Capacitance @ Vr, F: 0.3pF @ 1V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: HSMS-2850
Description

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The HSMS-2850-BLKG is a high-frequency diode that is used for various applications, such as radio frequency (RF) applications. These diodes are also known as Schottky Barrier Diodes (SBDs). They are semiconductor devices that are capable of rectifying voltage by blocking direct current while allowing alternating current to pass. They are typically used in a variety of RF circuits such as amplifiers, oscillators, mixers, and modulators. This article will discuss the application of the HSMS-2850-BLKG and its working principle.The HSMS-2850-BLKG is a Schottky Barrier Diode (SBD) that has a high-frequency operation and large reverse current capability. It is mainly used in RF applications and offers high speed, low capacitance, and low leakage. It has a reverse breakdown voltage of 28 Volts and a forward voltage drop of 0.5 Volts. It can operate at temperatures up to 175°C and is available in a lead-free package.The HSMS-2850-BLKG can be used in a variety of applications such as FM transmitters, TV tuners, GPS receivers, and digital receivers. It can also be used in cable modem applications. The diode can be used in RF circuits as an amplifier, oscillator, mixer, and modulator.The working principle of the HSMS-2850-BLKG is based on the Schottky diode effect. When a reverse bias voltage is applied, a barrier is created between the metal-semiconductor junction, which is known as the Schottky barrier. This barrier prevents current from going through the device in the reverse direction, while allowing direct current (DC) to pass through in the forward direction. When a voltage is applied to the diode in the forward direction, electrons from the metal-semiconductor contact move into the semiconductor, creating a current that passes through the device.The HSMS-2850-BLKG has a low capacitance that produces a very low insertion loss, making it ideal for RF applications. The device also offers a low capacitance to ensure maximum signal integrity. The diode\'s low leakage current ensures high performance in RF circuits, while its high speed ensures that signals are transmitted quickly and accurately.The HSMS-2850-BLKG is a reliable and economical diode that is suitable for a wide range of RF applications. It is a highly efficient device with low capacitance, low leakage, and high speed. Its high-frequency operation and large reverse current capability make it ideal for use in RF circuits. It is available in a lead-free package, which makes it easy to install, and its low cost makes it an attractive option for many circuits.In conclusion, the HSMS-2850-BLKG is a high-frequency diode that is suitable for radio frequency (RF) applications. It has a reverse breakdown voltage of 28 Volts and a forward voltage drop of 0.5 Volts. Its low capacitance and low leakage current provide a high level of signal integrity, making it ideal for RF circuits. It is available in a lead-free package and is a reliable and economical option for a variety of applications. Its working principle is based on the Schottky diode effect that blocks direct current while allowing alternating current to pass.

The specific data is subject to PDF, and the above content is for reference

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