HSMS-2852-TR2G

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The HSMS-2852-TR2G is a dual-gate surface mount Schottky diode that is widely used in Radio Frequency (RF) applications. It is an ideal device for low-power, high-frequency switching applications, as it has low capacitance and low turn-on voltage while maintaining high stability and consistently low power consumption. The device is an economical solution that offers superior RF performance.

The HSMS-2852-TR2G is a surface-mount Schottky diode that features two active gates. The dual gates allow for easy ON/OFF control of the diode, providing an on-demand switching mechanism without affecting the RF performance of the device. The two gates of the diode act as if they are connected in parallel, resulting in a low capacitance of 6.5 pF and a low turn-on voltage of 1.2V.

The HSMS-2852-TR2G is designed to provide superior RF performance within the range of 0.01 to 2 GHz. This is achieved by the device\'s superior high-frequency response and wide linearity range. The device\'s low capacitance and low turn-on voltage allow it to maintain high gain across a wide range of frequencies, making it suitable for many RF applications. Additionally, the device features a wide operating temperature range of -40 to 85 degrees Celsius.

The HSMS-2852-TR2G\'s excellent performance is due to its unique Schottky structure, which reduces the amount of power leakage and noise produced. The structure also reduces the amount of power required to turn the device on and off, making it an ideal choice for low power applications. Additionally, the device is extremely durable and reliable. It is also lead-free, making it a great choice for eco-friendly applications.

The HSMS-2852-TR2G provides an ideal solution for low-power, high-frequency applications such as automotive and industrial, wireless applications, communication systems, and consumer electronics. The device has a low turn-on voltage, which makes it suitable for low voltage applications. It is also low capacitance and has high linearity, making it suitable for use in a wide range of frequencies. Furthermore, its unique Schottky structure produces excellent performance in terms of power leakage and noise, while also providing durability and reliability.

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