HSMS-285B-TR1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky - Single
Voltage - Peak Reverse (Max):	2V
Capacitance @ Vr, F:	0.3pF @ 1V, 1MHz
Resistance @ If, F:	--
Operating Temperature:	150°C (TJ)
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323

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IntroductionHSMS-285B-TR1G is a high performance surface mount diode designed for RF – microwave applications. It is manufactured by Surface-Mount Semiconductor Corporation and offers excellent electrical performance when compared to conventional die mounted components. HSMS-285B-TR1G provides superior reliability and is ideal for use in cellular and satellite communication applications.Application FieldHSMS-285B-TR1G is a high performance RF microwave diode used in applications that require superior electrical performance and reliability. These include cellular communication applications such as base stations, cell phones, pagers and wireless data networks. It is also suitable for applications such as satellite communication, cable TV, wireless LAN and antenna systems, as well as other RF – microwave applications. The diode’s features make it ideal for use in these applications.FeaturesThe HSMS-285B-TR1G offers several features that make it an excellent choice for RF – microwave applications. It is a low loss device with a very low noise figure. It has a relatively low thermal resistance, which helps to minimize losses. It is also highly resistant to EMI (electromagnetic interference) and has a fairly good noise-rejection ratio. The diode’s high speed performance makes it ideal for use in high-speed communications applications.The diode also offers excellent electrical performance in terms of insertion loss, return loss, and isolation. These features help to ensure that the diode operates efficiently. Additionally, the diode has a relatively low capacitance, which helps to minimize crosstalk.PerformanceThe HSMS-285B-TR1G is an economical and reliable solution for RF-microwave applications. The diode offers high performance and excellent electrical performance. It has a very low noise figure, low thermal resistance, and a good noise-rejection ratio. Additionally, the diode has a relatively low capacitance, making it ideal for high-speed applications.Working PrincipleThe HSMS-285B-TR1G is a surface mount diode that operates according to the p-n junction rectifier principle. When a forward voltage is applied to the diode, charges are injected into the junction and an electric current may flow through the diode. The current is dependent on the forward voltage and the doping concentration of the junction. In the reverse direction, no current is drawn and the junction is said to be blocked. The HSMS-285B-TR1G offers high switching speed and excellent RF-microwave performance. The junction temperature determines the maximum switching speed of the device. When the diode is subjected to higher junction temperatures, the switching speed decreases and so does the performance. The diode is also designed to suppress temporary spikes in the power supply caused by switching. ConclusionThe HSMS-285B-TR1G is a high performance surface mount diode for RF-microwave applications. The diode is designed for superior electrical performance and reliability, making it ideal for cellular communication and satellite communication applications. It is also suitable for applications such as cable TV, wireless LAN and antenna systems. The diode has a low noise figure, low thermal resistance, and a good noise-rejection ratio. It has a relatively low capacitance, making it ideal for high-speed applications. It operates according to the p-n junction rectifier principle.

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