HSMS-285C-BLKG

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The HSMS-285C-BLKG is a Microwave Hybrid Diode from Avago Technologies (formerly Agilent Technologies), which is capable of handling a wide range of frequencies up to 67 GHz. It can be used as a rectifier, RF switch, mixer, or amplifier. It is particularly useful for applications such as high-volume production, test or measurement equipment, or for applications requiring high-frequency, low noise operation.

The HSMS-285C-BLKG is a two-rod reverse biased Schottky diode that consists of a silicon substrate body, two 2.8 mm N-type rods, and a gold plated lid. The substrate body is a 0.3 mm thick silicon wafer. The two 2.8 mm N-type rods are supported by an improved butterfly design that allows for a more efficient current flow. The gold plated lid is designed to improve the device’s ability to dissipate heat and to reduce RF losses.

The function of this diode is to control the flow of electrons between its two poles. In other words, it acts as a rectifier and is used to convert AC power to DC power. It can also act as an RF switch or mixer, controlling the power levels of radio frequency signals on either side of the diode. By controlling the amount of electrons current flow allowed through the two N-type rods, it is possible to control the power of the RF signal to both high and low levels.

In addition, the HSMS-285C-BLKG can also be used as an amplifier. By controlling the current in the N-type rods, the device can amplify or reduce the input power. This is beneficial for applications such as microwave and radar systems, where a highly amplified signal is required.

The device can work with a wide range of frequencies and is suitable for both high and low noise applications. It has a low noise figure of up to 0.5dB and can operate up to 67 GHz. It can tolerate a wide range of temperatures, from -55C to +150C, and provides excellent electrical performance.

The HSMS-285C-BLKG is an excellent choice for a wide range of applications, including high-volume production and test or measurement equipment. It is also a useful choice for applications requiring low-noise and high-frequency operation. This makes it an ideal choice for a variety of wireless and RF applications.

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