HSMS-2860-TR1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky - Single
Voltage - Peak Reverse (Max):	4V
Capacitance @ Vr, F:	0.3pF @ 0V, 1MHz
Resistance @ If, F:	--
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	HSMS-2860

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HSMS-2860-TR1G application field and working principle

The HSMS-2860-TR1G is a high speed, medium power, radial leaded PIN diode optimized for RF and microwave applications. It is designed for use in extremely demanding and critical RF or microwave circuits requiring small size, high speed, low power losses and a wide operating temperature range.The HSMS-2860-TR1G offers a wide range of performance characteristics for various RF or microwave applications. It is suitable for use in high speed switching, broadband attenuators, active protection circuits and pulse rectifiers. This device is also well suited for use in amplifier modules and high speed dc-to-dc converters as well as LNAs.The HSMS-2860-TR1G consists of two PIN diodes in series.The series-connected diodes provide better RF performance and offer a more linear current to voltage response than a single-diode configuration. The two PIN diodes are connected in the Miller capacitance configuration with their anodes connected to each other. This diode configuration reduces the operating voltage of the two PIN diodes, allowing them to operate with a lower forward-bias voltage.The HSMS-2860-TR1G\'s maximum frequency of operation is 40GHz. The device has a VSWR of 1.5:1 across a wide range of frequencies and is suitable for use in various medium frequency and wideband radar systems.The device is also optimized for high power operation. It has a low on-resistance and a high current-carrying capability of up to 1.2A. The device also offers excellent thermal stability, with a thermal stability coefficient of 3.5°C/W.When used in amplifier modules, the HSMS-2860-TR1G can provide high gain performance with low distortion. The device is also well suited for use in pulse applications such as fast switching circuits and power conversion applications.The HSMS-2860-TR1G is available in various packages, such as through-hole and surface mount. This allows design flexibility and can simplify manufacturing and testing processes.In summary, the HSMS-2860-TR1G is a high speed, medium power, radial leaded PIN diode optimized for RF and microwave applications. It offers excellent RF performance, low power losses and a wide operating temperature range. The device is well suited for use in switching, protection, pulse rectifier and amplifier modules. Its small size and wide range of packages make it suitable for various applications.

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