HSMS-2860-TR2G

The HSMS-2860-TR2G is part of the Diodes - RF range, which consists of general purpose transistors specifically designed for use in broadband and low noise amplifying applications. This device operates in the 300MHz to 2GHz range and is designed to be applied in various radio frequency applications, such as cellular base station amplifiers, local oscillator building blocks and pre-selectors in receivers. It offers excellent power gain and noise performance, enabling better performance and improved conversion efficiency.

The HSMS-2860-TR2G is constructed using a dual gate GaAs Field-Effect Transistor (FET). It is packaged in a surface mount capable housing, which comprises of four compact pins. This device specifically features two gates for the two devices in a common drain configuration. The dual gate design of the HSMS-2860-TR2G makes it suitable for applications requiring a wide frequency range, low noise and higher power gain. It features low noise figure, high linearity and high gain, which makes it suitable for a broad range of applications.

The working principle of HSMS-2860-TR2G is based on the field effect transistor, which operates in the saturation region. In this region, the increase in the drain current is completely dependent on the gate-source voltage. The gate voltage controls the drain current by regulating the current that flows through the channel formed between the source and gate terminals. It also determines the current density of the electron or hole charge carriers that move in the channel. As the gate voltage increases, the current that flows through the source and gate terminals also increases.

Due to its low noise figure, high linearity and high power gain, the HSMS-2860-TR2G is suitable for radio frequency transmission and earpiece amplifiers, mobile radio receivers and mobile radio transmitters. Other applications include land-mobile radio, FM broadcast and radar. The device is also used in multimedia devices such as smartphones, tablets, digital TVs, and modern laptop computers, where size, weight and heat constraints need to be taken into account. The reduced form factor and heat generated by the HSMS-2860-TR2G make it the ideal choice for these types of applications.

Overall, the HSMS-2860-TR2G is a high performance and efficient radio frequency device designed for use in various applications that require high linearity, low noise and high power gain. It is constructed using a dual gate GaAs FET and is packaged in a compact surface mount capable housing. The device features low noise figure and high linearity, making it suitable for a broad range of applications. It is widely used in radio frequency transmission and earpiece amplifiers, mobile radio receivers and mobile radio transmitters, as well as multimedia devices such as smartphones, tablets, digital TVs, and modern laptop computers.