
Allicdata Part #: | HSMS-2862-TR1-ND |
Manufacturer Part#: |
HSMS-2862-TR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY DETECT 4V SOT-23 |
More Detail: | RF Diode Schottky - 1 Pair Series Connection 4V ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 4V |
Capacitance @ Vr, F: | 0.3pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | HSMS-2862 |
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The HSMS-2862-TR1 is a type of diode that is commonly used in the field of radio frequencies (RF). It is a unidirectional diode that is designed to provide an extremely high level of attenuation for RF signals, which makes it an ideal choice for RF applications ranging from low- to high-power. In addition, it is capable of providing excellent waveform fidelity, low power losses, and wide operating temperature range. The HSMS-2862-TR1 is suitable for use in many applications such as digital radio, amplifiers, TV receivers, and more.
The HSMS-2862-TR1 has two distinct regions on its surface. The first region, referred to as the "source" region, is made up of a layer of semiconducting material. The source region is connected to an electrode, typically referred to as a "top-hat". The second region, referred to as the "drain" region, consists of a layer of metal that is connected to another electrode, usually referred to as a "collector". The junction between the source and drain regions is known as the junction space, which is designed to provide a high level of resistance to any signals traveling through the diode.
The working principle of the HSMS-2862-TR1 is based on the rectification of an RF signal, which involves the transfer of electrical energy from one medium to another. For example, when an RF signal passes through the diode, the current flowing through the diode changes from one direction to another. This results in a voltage drop across the diode, which is then rectified into a uniform type of energy. This process is what makes the HSMS-2862-TR1 particularly effective in RF applications.
The HSMS-2862-TR1 is commonly used in a variety of radio frequencies and power types, ranging from low-power to high-power applications. Its features, such as its excellent waveform fidelity, wide operating temperature range, and high attenuation level, make it an ideal choice for applications ranging from L-band communications systems to antennas. Its diode structure also makes it well-suited for various RF systems, such as antenna amplifiers and local oscillators.
The HSMS-2862-TR1 can also be utilized in a variety of other applications such as amplifiers, filters, and demodulators. Its low power loss also makes it suitable for use in low-power applications, such as TV receivers and modems. Additionally, its wide range of characteristics, such as its high level of power losses tolerance, makes it suitable for use in high-power applications, such as communication systems and satellites.
The HSMS-2862-TR1 is an ideal choice for applications in the field of radio frequencies, due to its excellent waveform fidelity, wide operating temperature range, and high attenuation level. Its diode structure makes it well-suited for a variety of RF applications, including amplifiers, local oscillators, and antennas. Additionally, its low power losses and wide range of characteristics make it suitable for use in both low- and high-power applications.
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