HSMS-2864-BLKG Allicdata Electronics
Allicdata Part #:

HSMS-2864-BLKG-ND

Manufacturer Part#:

HSMS-2864-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECT HF SOT-23
More Detail: RF Diode Schottky - 1 Pair Common Cathode 4V SOT...
DataSheet: HSMS-2864-BLKG datasheetHSMS-2864-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The HSMS-2864-BLKG is an advanced family of Schottky diodes specifically designed to provide low level and high-speed switching in RF applications. The device features a low capacitance and low forward voltage of 0.7V, high switching speed of 2GHZ, excellent RFI shielding, and low power dissipation properties. This makes it ideal for applications such as RF switches, low noise amplifiers, and pulse generators. Additionally, its excellent linearity capabilities make it suitable for RF mixers, modulators, and wideband amplifiers.

The HSMS-2864-BLKG diode is primarily composed of two terminal pins – an anode and a cathode. The cathode is connected to the positive lead of the power source and enables charge to flow through the diode in the forward direction. The anode is connected to the negative lead of the power source and enables charge to flow through the diode in the reverse direction. With this configuration, the device will allow current to flow in the forward direction while preventing current flow in the reverse direction.

The HSMS-2864-BLKG is also characterized by two primary electrical measurements – the forward voltage drop and the breakdown voltage. The forward voltage drop is the voltage across the diode at which it begins to conduct current. The breakdown voltage is the voltage across the diode at which it begins to permanently conduct. Increasing or decreasing the voltage across the diode increases or decreases the forward voltage drop and the breakdown voltage.

The HSMS-2864-BLKG device uses the Schottky effect to allow the fast switching of electrical signals. The Schottky effect is a phenomenon that occurs when electrons accelerated by a voltage potential tunnel across a potential barrier, allowing current to flow in the forward direction. This high-speed switching makes the device particularly suitable for pulsed applications such as RF switches and logic gates.

The HSMS-2864-BLKG is widely employed in a variety of RF applications. Its low capacitance and high switching speed makes it ideal for RF switches, low noise amplifiers, mixers, and modulators. Additionally, its excellent linearity also makes it suitable for wideband amplifiers and pulse generators. Furthermore, its low reverse leakage current gives it superior protection from RFI and EMI, making it capable of operating at higher frequencies. Finally, its low power dissipation properties make it an energy efficient network component.

In conclusion, the HSMS-2864-BLKG is a highly reliable, high-speed Schottky diode with excellent performance in RF applications. Its low forward voltage drop and breakdown voltage, together with its high speed switching, low capacitance characteristics, and low power dissipation make it suitable for use in a variety of RF applications. Additionally, its superior shielding, linearity, and low reverse leakage current make the device an ideal choice for use in high speed, high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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