HSMS-2864-TR1G Allicdata Electronics
Allicdata Part #:

HSMS-2864-TR1G-ND

Manufacturer Part#:

HSMS-2864-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECT HF SOT-23
More Detail: RF Diode Schottky - 1 Pair Common Cathode 4V SOT...
DataSheet: HSMS-2864-TR1G datasheetHSMS-2864-TR1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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Diodes are widely used in RF technology. The HSMS-2864-TR1G is a popular choice for RF applications due to its low capacitance and exceptional electrical characteristics. The device has a variety of different application fields and working principles.

HSMS-2864-TR1G Application Field

The HSMS-2864-TR1G is mainly used in RF ultra-low leakage applications, because of its low capacitance and exceptional electrical performance. This device is suitable for use in cell phones and other wireless communications systems, in which low capacitance is very important. It can also be used in a variety of baseband and RF signal processing applications, such as attenuators, low pass filters, variable gain stages and band pass filters.

Working Principles

The HSMS-2864-TR1G diode is an ultra-low capacitance PIN diode. It uses an internal Schottky barrier to reduce capacitance and increase frequency response. Its capacitance is extremely low, ranging from 0.1pF to 0.6pF, while its leakage current is very low at room temperature, ranging from 1mA to 50mA. This device can also be used in temperature range applications, such as cell phones and wireless communications systems, where temperature stability is important.

The HSMS-2864-TR1G operates by controlling the current through the p-n junction. When a low voltage (typically 2.5V) is applied, the current will flow through the junction, creating an on/off state with a very small capacitance. This allows for precise control of the current and voltage, making it an ideal choice for RF signal conditioning applications.

In terms of RF performance, the HSMS-2864-TR1G offers excellent frequency stability, with minimal frequency drift over time. It also provides excellent isolation, with a high input impedance and very low noise performance. This makes it a great choice for eliminating noise and interference in RF circuits.

Conclusion

The HSMS-2864-TR1G is a popular choice for RF applications due to its low capacitance and exceptional electrical characteristics. Its wide application fields and working principles make it an ideal choice for applications such as low leakage, temperature range, baseband and RF signal processing applications. This diode can also be used to eliminate noise and interference in RF circuits, making it a great choice for high performance RF solutions.

The specific data is subject to PDF, and the above content is for reference

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