
Allicdata Part #: | HSMS-2864-TR2G-ND |
Manufacturer Part#: |
HSMS-2864-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY DETECT HF SOT-23 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 4V SOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 4V |
Capacitance @ Vr, F: | 0.3pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HSMS-2864-TR2G is a diode designed for radio frequency (RF) applications.
This type of diode is a double varactor diode, related to avalanche diodes in that it has avalanche breakdown characteristics. The HSMS-2864-TR2G is designed to be used in RF circuits such as mobile phone base stations and receivers, satellite systems, microwave communications systems, and other similar applications.
In its basic form, the HSMS-2864-TR2G is a two-terminal diode that consists of a p-type and an n-type junction. The diode is the most basic form of a transistor, and it can be used for a wide range of applications since it is highly conductive in its forward direction and is highly non-conductive in its reverse direction.
The most common application of the HSMS-2864-TR2G is in radio frequency (RF) circuits, because of its high breakdown voltage and its low capacitance. The diode also has a low parasitic inductance, which makes it well suited for RF applications.
The working principle of the HSMS-2864-TR2G is fairly simple. When the diode is forward biased, the p-type and n-type junctions form a depletion region, which prevents current from flowing through the diode in one direction. The reverse bias voltage is applied to the diode, which causes the depletion region to expand, allowing current to flow in the reverse direction. The diode then behaves like an open switch, preventing current from flowing in one direction.
The HSMS-2864-TR2G also has a high switching speed, which is an important factor in many RF applications, such as wireless communication devices. Since it is a double varactor diode, it can also be used as a frequency multiplier, which is useful for efficient harmonic generation.
In summary, the HSMS-2864-TR2G is a two-terminal diode designed for radio frequency (RF) applications. It has a high breakdown voltage, low capacitance and parasitic inductance, and is suitable for many applications, such as mobile phone base stations and receivers, satellite systems, and microwave communication systems. Its working principle is also relatively simple, as it can be used as an open switch to prevent current from flowing in one direction. Finally, it has a high switching speed and can be used as a frequency multiplier, making it a versatile and useful component in many RF applications.
The specific data is subject to PDF, and the above content is for reference
DIODE SCHOTTKY RF 70V 1A SOT-363RF Diode...

DIODE PIN GP 50V 1A MINIPAKRF Diode PIN ...

DIODE PIN 50V 100MA SOD-323RF Diode PIN ...

DIODE PIN HF SW 30V 100MA VMN2RF Diode P...

DIODE SCHOTTKYRF Diode Schottky - Single...

DIODE PIN 60V 100MA EMD2 TRRF Diode PIN ...
