HSMS-2865-TR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky - 2 Independent
Voltage - Peak Reverse (Max):	4V
Capacitance @ Vr, F:	0.3pF @ 0V, 1MHz
Resistance @ If, F:	--
Operating Temperature:	150°C (TJ)
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143-4
Base Part Number:	HSMS-2865

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HSMS-2865-TR1 Diodes - RF Application Field and Working PrincipleThe HSMS-2865-TR1 diode is a semiconductor switching device designed for efficient operation in the radio frequency (RF) field. It is used for the control of radio frequency signals in the range of 10-50MHz. It is a versatile device with a number of applications in both low and high power RF applications.The major applications of HSMS-2865-TR1 include conversion of AC power signals to DC power signals, signal modulation and demodulation, signal switching, and RF amplifying. The diode has various advantages over other diodes, including good temperature stability and thermal resistance, high breakdown voltage, high electric current efficiency and low cost.The HSMS-2865-TR1 diode is manufactured using silicon-on-sapphire (SOS) technology. It has a layer of oxide between the silicon and sapphire substrates, which provides superior thermal resistance. The oxide layer is also used to improve switching speeds and reduce power consumption. The device has an integrated gate structure, which makes it suitable for high-speed switching applications.The HSMS-2865-TR1’s working principle is based on the PN diode junction or diode bridge circuit. The diode junction is formed by two P-type and N-type semiconductor materials which are connected in series. When an external voltage is applied across the two PN junctions, one of the junctions acts as a rectifier and the other acts as an amplifier. This creates a feedback effect which is used to modify the RF output. The amplified RF output is then fed to a load element, such as an inductor, to provide the desired output.The HSMS-2865-TR1 is suitable for use in radio applications, such as mobile phone antennas and other radio-frequency based systems. It can also be used for switching, amplified and filtered output signals. The device is highly reliable and has a long operating lifetime due to its low power consumption and excellent temperature stability.The HSMS-2865-TR1 diode is designed for efficient operation in the radio frequency field and can be used for RF applications ranging from 10MHz to 50MHz. Its reliable, low power consumption and excellent thermal resistance makes it an ideal device for applications ranging from mobile phone antennas to switching and amplified signals. The device is cost-effective and provides superior performance when compared to other diodes.

The specific data is subject to PDF, and the above content is for reference