HSMS-286B-BLKG Allicdata Electronics
Allicdata Part #:

516-1936-ND

Manufacturer Part#:

HSMS-286B-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECT HF SOT-323
More Detail: RF Diode Schottky - Single 4V SOT-323
DataSheet: HSMS-286B-BLKG datasheetHSMS-286B-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: HSMS-286B
Description

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The HSMS-286B-BLKG is a Diodes - RF device. Its primary characteristics include an exceptionally small size, a low current consumption and a wide range of working temperatures. It works in the range of -10⁰C to + 85⁰C, making it suitable for an array of diverse application fields. The product is also very suitable for applications requiring small size and low current consumption, such as secure communication and energy management.

The HSMS-286B-BLKG is a diode with an incredibly high-speed recovery time, making it incredibly suitable for microwave and radio frequency applications. The diode works as a switch or detector in both AC and DC circuits, allowing for a variety of uses. The device also has a very low on-state voltage and can handle an input signal power of up to 200 W. As such, the HSMS-286B-BLKG can be advantageously used for signal modulation, signal switching, and signal detection.

The HSMS-286B-BLKG is a planar-type gallium arsenide diode that works as fast switch or detector when a voltage is applied to it. It consists of several parts; the junction-type MOSFET, which acts as a gate, the source detector diode, and the base diode, which is the essential part of the device. When a voltage higher than the forward breakover voltage is applied to the device, the gate junction MOSFET allows electrons to pass through, turning the device on. This "ON" action is very quick, allowing the HSMS-286B-BLKG to quickly switch between the states of on or off. This makes it ideal for applications that need fast switching.

The HSMS-286B-BLKG also has an impressive power efficiency, allowing for lower power consumption. This is why it is a popular choice for many power management and energy-saving applications. It is capable of dissipating up to 100 W of power without generating any excess heat, making it a great choice for environmental protection as well. With its wide range of temperature ranges, low current consumption, and small size, it is apparent why the HSMS-286B-BLKG is such a popular device in the field of Diodes - RF.

All in all, the HSMS-286B-BLKG is a versatile device that has a wide range of applications. Its small size, low current consumption, flexible temperature range, and impressive power efficiency make it a great choice for applications that need fast switching, secure communication and energy management. With its impressive characteristics, it is easy to see why it is such a popular choice in the field of Diodes - RF.

The specific data is subject to PDF, and the above content is for reference

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