HSMS-286B-TR1G

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The HSMS-286B-TR1G is a member of Avago Technologies’ family of surface mount Schottky barrier diodes. Avago Technologies offer a variety of different package configurations, with the HSMS-286B-TR1G being a miniature surface mount device that is designed for high-frequency RF applications. The device is housed in a standard industry surface mount package such as a SOT-23 mechanical profile. The device’s terminals are gold-plated to ensure good electrical contact, and the package is RoHS compliant.

The HSMS-286B-TR1G has a wide range of applications in various radio frequency (RF) electronics. It is suitable for use in applications such as low-noise amplifier, mixer, RF switches, as well as other RF or microwave devices.

At the heart of the HSMS-286B-TR1G is a Schottky barrier diode. A Schottky diode is a semiconductor device made up of two regions of differing conductivity separated by a thin layer of metallurgical junction. It is a lower power device than a regular diode, and has a faster switching time. The HSMS-286B-TR1G operates in a frequency range of 300MHz to 6GHz.

The HSMS-286B-TR1G can be used in a variety of RF applications including amplifiers, mixers, and switches. The diode produces low noise, high speed, and high linearity performance. It has high dynamic range, low insertion loss, and fast settling time. As such, it can be used in a variety of applications.

The HSMS-286B-TR1G also has low reverse leakage current, which makes it suitable for use in applications that require low offsets. The device operates at lower temperature, making it suitable for extended temperatures and high-reliability applications. Furthermore, the device has low thermal resistance and low impedance.

The HSMS-286B-TR1G is a versatile and reliable device for high-frequency RF applications. With its wide frequency range, low power consumption, and low impedance, it is an ideal solution for mixing and switching applications. In addition, its low leakage current and fast switching time make it suitable for applications that require low offsets. The device provides high linearity, high dynamic range, and fast settling time while being able to operate in extended temperatures. As such, it is an excellent choice for high-frequency RF applications.

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