HSMS-286C-TR2G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HSMS-286C-TR2G is a double pinned package, two gate gallium arsenide (GaAs) p-channel mesa microwave transistor created by Hewlett Packard corporation during the year 1988. The transistor works well at a frequency range of 20 GHz which lies within the microwave spectrum. The HSMS-286C-TR2G is packaged in a 4 pin TO-8 transistor outline. It can handle a maximum operating power of 0.8 watts without failure.

The HSMS-286C-TR2G transistor can be used in antenna amplifiers, linear drivers and small signal amplifiers in electronic systems. It is a popular choice for designers. Its capability of providing a high gain of 11 dB helps to increase efficiency of the system. The frequency range of HSMS-286C-TR2G renders it suitable for use in microwave applications. It features high input impulses and switching speeds making it ideal for use in digital applications. Apart from that, it also finds its use in other applications such as AGC, stereo decoders and cellular phone I/Q modulators.

The transistor utilizes a simple working principle which depends on the biasing of the device. The device works when the gate bias is maintained in the turn-on state and with a leakage current of the device. A collector-to-emitter voltage from 2 volt to 4 volts is supplied at the beginning. When the device is in the condition of a biasing, current starts to flow in the collector circuit. The collector current flows as slightly smaller than the current which is flowing in the emitter. The collector current results in the emitter current through the emitter resistor. The base-emitter junction makes sure that the emitter current doesn’t exceed the collector current. As the emitter current increases the base voltage begins to raise, limiting the emitter current automatically.

The gate of the HSMS-286C-TR2G helps to control the current flow in the transistor. During the turn on process, gate voltage below the turn-on voltage generally results in a higher collector-to-emitter voltage than the turn on voltage. The current will start to flow in the collector circuit due to the presence of the gate voltage. As the voltage of the gate exceeds the cutoff voltage, the current will start to turn off in the collector circuit. The gate current is normally very low, which makes the HSMS-286C-TR2G suitable for use in low power applications.

The HSMS-286C-TR2G is an incredibly useful transistor which is used in a variety of applications due to its characteristics. This double pinned package, two gate gallium arsenide (GaAs) p-channel mesa microwave transistor can provide a high gain of 11 dB which helps to increase efficiency of the system. It features high input impulses and switching speeds making it an ideal choice for use in digital applications. It can handle a maximum operating power of 0.8 watts without failure and is a popular choice for designers. It utilizes a simple working principle which depends on the biasing of the device, making it easy to operate. With its wide scope of applications, the HSMS-286C-TR2G renders itself as a reliable and efficient transistor suitable for use in all electronic systems.

The specific data is subject to PDF, and the above content is for reference